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BAV19TC-C

Description
Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, HALOGEN AND LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size74KB,1 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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BAV19TC-C Overview

Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, HALOGEN AND LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2

BAV19TC-C Parametric

Parameter NameAttribute value
MakerSECOS
Parts packaging codeDO-35
package instructionO-LALF-W2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
JESD-609 codee3
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.5 W
Maximum repetitive peak reverse voltage250 V
Maximum reverse recovery time0.05 µs
surface mountNO
Terminal surfaceTIN
Terminal formWIRE
Terminal locationAXIAL

BAV19TC-C Preview

BAV19TC/BAV20TC/BAV21TC
Elektronische Bauelemente
Surface Mount Small Signal Switching Diode
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DO-35
FEATURE
DO-35 Package (JEDEC)
Through-Hole Device Type Mounting
Hermetically Sealed Glass
Compression Bonded Construction
All external surfaces are corrosion resistant and leads
are readily solderable
RoHS Compliant
Solder hot dip Tin (Sn) lead finish
Cathode indicated by polarity band
C
A
B
D
A
ELECTRICAL SYMBOL
REF.
A
B
C
D
Millimeter
Min.
Max.
25.4
38.1
3.05
5.08
1.53
2.28
0.46
0.55
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak
Forward Current
Power Dissipation
Thermal Resistance Junction to Ambient
Operating Junction, Storage Temperature
PW = 1.0s
PW = 1.0μs
Symbol
V
RRM
I
F(AV)
I
FSM
P
D
R
θJA
T
J
, T
STG
Ratings
250
200
1.0
4.0
500
300
175, -65 ~ +200
Unit
V
mA
A
mW
°C
/ W
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameters
BAV19TC
Breakdown Voltage
BAV20TC
BAV21TC
BAV19TC
Reverse Leakage Current
BAV20TC
BAV21TC
Forward Voltage
V
F
I
R
B
V
Symbol
Min.
120
200
250
-
-
-
-
-
-
-
Max.
-
-
-
100
100
100
1.0
1.25
50
5.0
Unit
V
Test Conditions
I
R
=100μA
V
R
= 100V
nA
V
R
= 150V
V
R
= 200V
I
F
= 100mA
I
F
= 200mA
I
F
= I
R
= 30 mA,
I
RR
=3mA, R
L
=100
V
R
= 0V, f=1MHz
V
Reverse Recovery Time
Capacitance
http://www.SeCoSGmbH.com/
T
RR
C
nS
pF
Any changes of specification will not be informed individually.
22-Jul-2010 Rev. A
Page 1 of 1

BAV19TC-C Related Products

BAV19TC-C BAV20TC BAV20TC-C BAV21TC BAV21TC-C
Description Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, HALOGEN AND LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, HALOGEN AND LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2 Rectifier Diode, 1 Element, 0.2A, 250V V(RRM), Silicon, DO-35, HALOGEN AND LEAD FREE, HERMETIC SEALED, GLASS PACKAGE-2
Maker SECOS SECOS SECOS SECOS SECOS
Parts packaging code DO-35 DO-35 DO-35 DO-35 DO-35
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Contacts 2 2 2 2 2
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-35 DO-35 DO-35 DO-35 DO-35
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
JESD-609 code e3 e3 e3 e3 e3
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Maximum output current 0.2 A 0.2 A 0.2 A 0.2 A 0.2 A
Package body material GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Maximum power dissipation 0.5 W 0.5 W 0.5 W 0.5 W 0.5 W
Maximum repetitive peak reverse voltage 250 V 250 V 250 V 250 V 250 V
Maximum reverse recovery time 0.05 µs 0.05 µs 0.05 µs 0.05 µs 0.05 µs
surface mount NO NO NO NO NO
Terminal surface TIN TIN TIN TIN TIN
Terminal form WIRE WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL AXIAL
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