Transistors with built-in Resistor
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Silicon PNP epitaxial planer transistor
For digital circuits
1.6±0.15
0.4
0.8±0.1
0.4
0.2
-0.05
0.15
-0.05
+0.1
Unit: mm
s
Features
1.6±0.1
1.0±0.1
0.5
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
SS-Mini type package, allowing automatic insertion through tape
packing and magazine packing.
1
0.5
3
2
0.45±0.1 0.3
0.75±0.15
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
125
125
–55 to +125
Unit
V
V
mA
mW
˚C
˚C
1 : Base
2 : Emitter
3 : Collector
SS–Mini Flat Type Pakage (J type)
Internal Connection
R1
0 to 0.1
Marking Symbol (R
1
)
UN9111
6A
10kΩ
UN9112
6B
22kΩ
UN9113
6C
47kΩ
UN9114
6D
10kΩ
UN9115
6E
10kΩ
UN9116
6F
4.7kΩ
UN9117
6H
22kΩ
UN9118
6I
0.51kΩ
UN9119
6K
1kΩ
UN9110
6L
47kΩ
UN911D
6M
47kΩ
UN911E
6N
47kΩ
UN911F
6O
4.7kΩ
UN911H
6P
2.2kΩ
UN911L
6Q
4.7kΩ
UNR911AJ
6X
100kΩ
UNR911BJ
6Y
100kΩ
UNR911CJ
6Z
—
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
100kΩ
—
47kΩ
0 to 0.1
0.2±0.1
1 : Base
2 : Emitter
3 : Collector
SS–Mini Type Pakage
Unit: mm
1.60±0.05
0.80
0.80±0.05
0.425 0.425
0.80
1.00±0.05
1.60
–0.03
+0.05
0.50
0.50
+0.1
0.85
–0.03
+0.05
+0.03
0.12
–0.01
C
B
R2
E
0.70
–0.03
+0.05
0.27±0.02
0.80
1
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
s
Electrical Characteristics
Parameter
Collector cutoff current
UN9111
UN9112/9114/911E/911D
Emitter
cutoff
current
UN9113/UNR911AJ
UN9115/9116/9117/9110/UNR911BJ
UN911F/911H
UN9119
UN9118/911L/911CJ
Collector to base voltage
Collector to emitter voltage
UN9111
Forward
current
transfer
ratio
UN9112/911E
UN9113/9114/UNR911AJ/911CJ
UN9115*/9116*/9117*/9110*UNR911BJ
UN911F/911D/9119/911H
UN9118/911L
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
UN9113/UNR911BJ
UN911D
UN911E
UNR911AJ
Transition frequency
UNR911AJ
UN9111/9114/9115
UN9112/9117
UN9113/9110/911D/911E
Input
resis-
tance
UN9116/911F/911L
UN9118
UN9119
UN911H
UNR911AJ/911BJ
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
V
CBO
V
CEO
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
35
60
h
FE
V
CE
= –10V, I
C
= –5mA
80
160
30
20
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –5.0V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 2mA, f = 200MHz
150
80
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
100
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
– 0.25
V
V
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN9115/9116/9117/9110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
s
Electrical Characteristics (continued)
Parameter
UN9111/9112/9113/911L
UN9114
UN9118/9119
Resis-
tance
ratio
UN911D
UN911E
UN911F
UN911H
UNR911AJ
Resistance between Emitter to Base
UNR911CJ
R
2
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
1.0
–30%
47
30%
0.27
max
1.2
0.25
0.12
Unit
3
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Common characteristics chart
P
T
— Ta
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN9111
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25˚C
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Collector current I
C
(mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio h
FE
25˚C
120
–25˚C
80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
Transistors with built-in Resistor 911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Characteristics charts of UN9112
I
C
— V
CE
–160
–140
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
–120
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
25˚C
Ta=75˚C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN9113
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Forward current transfer ratio h
FE
300
Ta=75˚C
25˚C
200
–25˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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