EEPROM, 32KX8, 150ns, Parallel, CMOS, CQCC32
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | LSC/CSI |
| package instruction | QCCN, LCC32,.45X.55 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 150 ns |
| Other features | AUTOMATIC WRITE;PAGE WRITE;BULK ERASE |
| command user interface | NO |
| Data polling | YES |
| Durability | 10000 Write/Erase Cycles |
| JESD-30 code | R-CQCC-N32 |
| JESD-609 code | e0 |
| memory density | 262144 bit |
| Memory IC Type | EEPROM |
| memory width | 8 |
| Number of functions | 1 |
| Number of terminals | 32 |
| word count | 32768 words |
| character code | 32000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 32KX8 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| encapsulated code | QCCN |
| Encapsulate equivalent code | LCC32,.45X.55 |
| Package shape | RECTANGULAR |
| Package form | CHIP CARRIER |
| page size | 64 words |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Programming voltage | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.00035 A |
| Maximum slew rate | 0.06 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | NO LEAD |
| Terminal pitch | 1.27 mm |
| Terminal location | QUAD |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| switch bit | YES |
| Maximum write cycle time (tWC) | 3 ms |
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