Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/6118/
6119/6110/611D/611E/611F/611H/611L
Silicon PNP epitaxial planer transistor
For digital circuits
Unit: mm
6.9±0.1
1.05 2.5±0.1
(1.45)
±0.05
0.8
q
s
Resistance by Part Number
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
0.45
–0.05
+0.1
UN6111
UN6112
UN6113
UN6114
UN6115
UN6116
UN6117
UN6118
UN6119
UN6110
UN611D
UN611E
UN611F
UN611H
UN611L
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
2.2kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
10kΩ
4.7kΩ
1
2
3
0.45
–0.05
2.5±0.5
2.5±0.5
+0.1
1 : Emitter
2 : Collector
3 : Base
MT-1 Type Package
Internal Connection
R1
2.5±0.1
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–100
400
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
14.5±0.5
q
0.85
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
MT-1 type package, allowing supply with the radial taping.
0.65 max.
1.0
3.5±0.1
0.8
s
Features
0.15
0.7
4.0
1
Transistors with built-in Resistor
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
s
Electrical Characteristics
Parameter
Collector cutoff current
UN6111
UN6112/6114/611E/611D
Emitter
cutoff
current
UN6113
UN6115/6116/6117/6110
UN611F/611H
UN6119
UN6118/611L
Collector to base voltage
Collector to emitter voltage
UN6111
UN6112/611E
Forward
current
transfer
ratio
UN6113/6114
UN6115*/6116*/6117*/6110*
UN611F/611D/6119/611H
UN6118/611L
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
UN6113
UN611D
UN611E
Transition frequency
UN6111/6114/6115
UN6112/6117
Input
resis-
tance
UN6113/6110/611D/611E
UN6116/611F/611L
UN6118
UN6119
UN611H
UN6111/6112/6113/611L
UN6114
Resis-
tance
ratio
UN6118/6119
UN611D
UN611E
UN611F
UN611H
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= –50V, I
E
= 0
V
CE
= –50V, I
B
= 0
min
typ
max
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= –6V, I
C
= 0
– 0.01
–1.0
–1.5
–2.0
V
CBO
V
CEO
I
C
= –10µA, I
E
= 0
I
C
= –2mA, I
B
= 0
–50
–50
35
60
h
FE
V
CE
= –10V, I
C
= –5mA
80
160
30
20
V
CE(sat)
V
OH
I
C
= –10mA, I
B
= – 0.3mA
V
CC
= –5V, V
B
= – 0.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –2.5V, R
L
= 1kΩ
V
OL
V
CC
= –5V, V
B
= –3.5V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –10V, R
L
= 1kΩ
V
CC
= –5V, V
B
= –6V, R
L
= 1kΩ
f
T
V
CB
= –10V, I
E
= 1mA, f = 200MHz
80
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
0.8
0.17
0.08
R
1
/R
2
3.7
1.7
0.37
0.17
1.0
0.21
0.1
4.7
2.14
0.47
0.22
1.2
0.25
0.12
5.7
2.6
0.57
0.27
(+30%)
kΩ
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
MHz
V
– 0.25
V
V
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN6115/6116/6117/6110)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
P
T
— Ta
500
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
Total power dissipation P
T
(mW)
400
300
200
100
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN6111
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25˚C
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75˚C
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Collector current I
C
(mA)
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
Forward current transfer ratio h
FE
25˚C
120
–25˚C
80
25˚C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
–10000
–3000
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
3
Transistors with built-in Resistor
Characteristics charts of UN6112
I
C
— V
CE
–160
–140
Ta=25˚C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Forward current transfer ratio h
FE
Collector current I
C
(mA)
–120
–100
300
Ta=75˚C
200
25˚C
–25˚C
100
25˚C
Ta=75˚C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN6113
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE(sat)
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
Collector current I
C
(mA)
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25˚C
–0.03
–0.01
–0.1 –0.3
Ta=75˚C
Forward current transfer ratio h
FE
300
Ta=75˚C
25˚C
200
–25˚C
–0.4mA
–0.3mA
–0.2mA
25˚C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
Transistors with built-in Resistor
C
ob
— V
CB
6
UN6111/6112/6113/6114/6115/6116/6117/
6118/6119/6110/611D/611E/611F/611H/611L
I
O
— V
IN
V
IN
— I
O
V
O
=–5V
Ta=25˚C
–100
–30
V
O
= –0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
Output current I
O
(
µA
)
4
–300
–100
–30
–10
–3
Input voltage V
IN
(V)
–0.6
–0.8
–1.0
–1.2
–1.4
–1000
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN6114
I
C
— V
CE
–160
–100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
400
h
FE
— I
C
V
CE
= –10V
I
B
=–1.0mA
–30
–10
–3
–1
–0.3
–0.1
–0.03
–25˚C
–0.01
–0.1 –0.3
–1
–3
–10
–30
–100
25˚C
Ta=75˚C
Collector current I
C
(mA)
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
–0.3mA
–0.2mA
–0.1mA
Forward current transfer ratio h
FE
–140
300
Ta=75˚C
200
25˚C
–25˚C
100
–8
–10
–12
0
–1
–3
–10
–30
–100 –300 –1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
–10000
–3000
V
O
=–5V
Ta=25˚C
–1000
–300
V
IN
— I
O
V
O
= –0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
–1000
–300
–100
–30
–10
–3
–100
–30
–10
–3
–1
–0.3
–0.1
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
5
京公网安备 11010802033920号
EEWORLD
