BAS12113 datasheet, PDF - EEWORLD Datasheet

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BAS12113: DescriptionDIODE 0.3 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode; CategoryDiscrete semiconductor diode; File Size131KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BAS12113 Overview

DIODE 0.3 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode

BAS12113 Parametric

Parameter Name	Attribute value
Maker	NXP
Objectid	1429335278
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
compound_id	9429939
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.3 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	400 V
Maximum reverse recovery time	1 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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BAS12113 Related Products

	BAS12113	BAS11133	BAS11143	BAS11113	BAS12133
Description	DIODE 0.3 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.3 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.3 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.3 A, 300 V, SILICON, SIGNAL DIODE, Signal Diode	DIODE 0.3 A, 400 V, SILICON, SIGNAL DIODE, Signal Diode
package instruction	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	0.3 A	0.3 A	0.3 A	0.3 A	0.3 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	400 V	300 V	300 V	300 V	400 V
Maximum reverse recovery time	1 µs	1 µs	1 µs	1 µs	1 µs
surface mount	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	NXP	-	NXP	-	NXP

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