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B7N9

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1200V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size190KB,2 Pages
ManufacturerEDAL
Websitehttp://www.edal.com/
Download Datasheet Parametric View All

B7N9 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 1.5A, 1200V V(RRM), Silicon,

B7N9 Parametric

Parameter NameAttribute value
MakerEDAL
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current60 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage1200 V
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL
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