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MBR20H100CT-E1

Description
10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size4MB,10 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBR20H100CT-E1 Overview

10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR20H100CT-E1 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionGreen, Plastic, TO-220, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structureCOMMON CATHODE, 2 ELEMENTS
Diode component materialssilicon
Diode typerectifier diode
applicationhigh voltage
Phase1
Maximum repetitive peak reverse voltage100 V
Maximum average forward current10 A
Maximum non-repetitive peak forward current20 A
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
General Description
High voltage dual Schottky rectifier suited for switch
mode power supplies and other power converters. This
device is intended for use in medium voltage opera-
tion, and particularly, in high frequency circuits where
low switching losses and low noise are required.
MBR20H100C is available in TO-220F-3, TO-220-3
and TO-220-3 (2) packages.
MBR20H100C
Main Product Characteristics
I
F (AV)
V
RRM
T
J
V
F
(max)
2×10A
100V
175
o
C
0.64V
Features
·
·
·
·
·
·
Low Forward Voltage: 0.64V @
C
High Surge Capacity
175
o
C Operating Junction Temperature
20A Total (10A Each Diode Leg)
Guard-ring for Stress Protection
Pb-free Package
125
o
Mechanical Characteristics
·
·
·
Case: Epoxy, Molded
Epoxy Meets UL 94V-0 @ 0.125in.
Weight (Approximately):
2Grams (TO-220-3, TO-220-3 (2) and
TO-220F-3)
Finish: All External Surfaces Corrosion Resistant
and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260
o
C Maximum for 10 Seconds
·
·
·
Applications
·
·
·
Power Supply Output Rectification
Power Management
Instrumentation
TO-220F-3
TO-220-3 (Optional)
TO-220-3 (2)
Figure 1. Package Types of MBR20H100C
www.kersemi.com
1

MBR20H100CT-E1 Related Products

MBR20H100CT-E1 MBR20H100CT-G1 MBR20H100CTF-G1 MBR20H100CTF-E1
Description 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
Number of terminals 3 3 3 3
Number of components 2 2 2 2
Processing package description Green, Plastic, TO-220, 3 PIN Green, Plastic, TO-220, 3 PIN Green, Plastic, TO-220, 3 PIN Green, Plastic, TO-220, 3 PIN
state TRANSFERRED TRANSFERRED TRANSFERRED TRANSFERRED
packaging shape Rectangle Rectangle Rectangle Rectangle
Package Size Flange mounting Flange mounting Flange mounting Flange mounting
Terminal form THROUGH-hole THROUGH-hole THROUGH-hole THROUGH-hole
Terminal location single single single single
Packaging Materials Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy
Craftsmanship SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
structure COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials silicon silicon silicon silicon
Diode type rectifier diode rectifier diode rectifier diode rectifier diode
application high voltage high voltage high voltage high voltage
Phase 1 1 1 1
Maximum repetitive peak reverse voltage 100 V 100 V 100 V 100 V
Maximum average forward current 10 A 10 A 10 A 10 A
Maximum non-repetitive peak forward current 20 A 20 A 20 A 20 A

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