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MBR30200FCT

Description
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size2MB,4 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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MBR30200FCT Overview

30 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB

Power Schottky Rectifier - 30Amp 200Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0
-High Junction Temperature Capability
-Low forward voltage, high current capability
-High surge capacity
-Low power loss, high efficiency
-ESD performance human body mode > 4 KV
Application
-AC/DC Switching Adaptor and other Switching Power Supply
-PDP
Absolute maximum ratings
Symbol
Ratings
30
200
350
0.72
-50 to +175
Unit
A
V
A
V
ºC
Conditions
Average Forward Current
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
Forward Voltage Drop
Operating and Storage Temperature
I
F(AV)
V
RRM
I
FSM
V
F
T
j,
T
stg
Electrical characteristics
Parameters
Symbol
Ratings
Conditions
Per Leg at
I
F
= 15A
Maximum Instantaneous Forward Voltage
V
F
0.90V
0.72V
Tc = 25ºC
Tc = 125ºC
Per Leg at
V
R
= 200V
Maximum Reverse Leakage Current
I
R
0.05mA
10mA
Tc = 25ºC
Tc = 125ºC
Per Leg
2.2
ºC/W
Typical Thermal Resistance,Junction to Case
TO-220AB
ITO-220AB
TO-247AD
TO-3P
R
θ
(j-c)
4.5
ºC/W
1.25
ºC/W
1.1
ºC/W
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