Transistors with built-in Resistor
UNR511x Series
(UN511x Series)
Silicon PNP epitaxial planar type
Unit: mm
(0.425)
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
S-Mini type package, allowing automatic insertion through the tape/
magazine packing
0.3
+0.1
–0.0
3
0.15
+0.10
–0.05
1.25
±0.10
2.1
±0.1
5˚
1
2
0.2
±0.1
0.9
±0.1
0.9
+0.2
–0.1
(0.65) (0.65)
1.3
±0.1
■
Resistance by Part Number
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Marking symbol
UNR5110 (UN5110)
6L
UNR5111 (UN5111)
6A
UNR5112 (UN5112)
6B
UNR5113 (UN5113)
6C
UNR5114 (UN5114)
6D
UNR5115 (UN5115)
6E
UNR5116 (UN5116)
6F
UNR5117 (UN5117)
6H
UNR5118 (UN5118)
6I
UNR5119 (UN5119)
6K
UNR511D (UN511D)
6M
UNR511E (UN511E)
6N
UNR511F (UN511F)
6O
UNR511H (UN511H)
6P
UNR511L (UN511L)
6Q
UNR511M (UN511M)
EI
UNR511N (UN511N)
EW
UNR511T (UN511T)
EY
UNR511V (UN511V)
FC
UNR511Z (UN511Z)
FE
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
22 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
2.0
±0.2
1: Base
2: Emitter
3: Collector
EIAJ: SC-70
SMini3-G1 Package
Internal Connection
R
1
B
R
2
E
0 to 0.1
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
150
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00022BED
1
UNR511x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR5110/5115/5116/5117
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.4
−
0.5
−1.0
−1.5
−2.0
h
FE
V
CE
=
−10
V, I
C
=
−5
mA
6
20
30
35
60
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
I
C
= −10
mA, I
B
= −1.5
mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
f
T
R
1
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
−30%
80
150
0.51
1.0
2.2
4.7
10
22
47
R
1
/R
2
0.08
0.047
0.1
0.10
0.21
0.12
+30%
kΩ
MHz
−4.9
−
0.2
V
V
400
460
−
0.25
V
200
20
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR5113
(Collector open) UNR5112/5114/511D/
511E/511M/511N/511T
UNR511Z
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
Forward current UNR511V
transfer ratio
UNR5118/511L
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
UNR5113/5114/511M
UNR511N/511T
UNR5110
*
/5115
*
/5116
*
/5117
*
Collector-emitter saturation voltage
UNR511V
Output voltage high-level
Output voltage low-level
UNR5113
UNR511D
UNR511E
Transition frequency
UNR5116
Input
resistance
UNR5118
UNR5119
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
Resistance
ratio
UNR511M
UNR511N
UNR5118/5119
UNR511Z
2
SJH00022BED
UNR511x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance
ratio
UNR5114
UNR511H
UNR511T
UNR511F
UNR511V
UNR5111/5112/5113/511L
UNR511E
UNR511D
0.8
1.70
3.7
0.37
Symbol
Conditions
Min
0.17
0.17
Typ
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
Max
0.25
0.27
Unit
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR5110
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00022BED
3
UNR511x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5111
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
−100
I
C
/ I
B
=
10
160
V
CE
= −10
V
h
FE
I
C
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
25°C
120
−25°C
80
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−
0.1
−25°C
−40
40
−
0.2 mA
−
0.1 mA
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
=
25°C
5
4
Output current I
O
(
µA
)
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
−
0.01
−
0.1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00022BED
UNR511x Series
Characteristics charts of UNR5112
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
=
−5
V
T
a
= 25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR5113
I
C
V
CE
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
100
0
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00022BED
5
Embedded System
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