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BAV199E6327

Description
Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    diode   
File Size68KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BAV199E6327 Overview

Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN

BAV199E6327 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4.5 A
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.33 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage80 V
Maximum reverse recovery time1.5 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
BAV199...
Silicon Low Leakage Diode
Low-leakage applications
Medium speed switching times
Series pair configuration
Pb-free (RoHS compliant) package
1)
Qualified according AEC Q101
BAV199
!
, 
,

Type
BAV199
Parameter
Diode reverse voltage
Peak reverse voltage
Forward current
Package
SOT23
Configuration
series
Symbol
V
R
V
RM
I
F
I
FSM
4.5
0.5
P
tot
T
j
T
stg
330
150
-65 ... 150
Value
80
85
200
Marking
JYs
Unit
V
mA
A
Maximum Ratings
at
T
A
= 25°C, unless otherwise specified
Non-repetitive peak surge forward current
t
= 1 µs
t
=1s
Total power dissipation
BAV199,
T
S
31°C
Junction temperature
Storage temperature
mW
°C
Thermal Resistance
Parameter
Junction - soldering point
2)
BAV199
1
Pb-containing
Symbol
R
thJS
Value
360
Unit
K/W
package may be available upon special request
2
For calculation of
R
thJA
please refer to Application Note Thermal Resistance
1
2007-04-19

BAV199E6327 Related Products

BAV199E6327 BAV199E6433
Description Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon, SOT-23, 3 PIN Rectifier Diode, 2 Element, 0.2A, 80V V(RRM), Silicon,
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
package instruction R-PDSO-G3 R-PDSO-G3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Configuration SERIES CONNECTED, CENTER TAP, 2 ELEMENTS SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.9 V 0.9 V
JESD-30 code R-PDSO-G3 R-PDSO-G3
Humidity sensitivity level 1 1
Maximum non-repetitive peak forward current 4.5 A 4.5 A
Number of components 2 2
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Maximum output current 0.2 A 0.2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260
Maximum power dissipation 0.33 W 0.33 W
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 80 V 80 V
Maximum reverse recovery time 1.5 µs 3 µs
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
Maximum time at peak reflow temperature 40 40

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