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UN4212

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size165KB,13 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

UN4212 Overview

Composite Device - Transistors with built-in Resistor

UN4212 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)160
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Transistors with built-in Resistor
UN4211/4212/4213/4214/4215/4216/4217/4218/
4219/4210/421D/421E/421F/421K/421L
Silicon NPN epitaxial planer transistor
For digital circuits
4.0±0.2
3.0±0.2
Unit: mm
s
Features
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
UN4211
UN4212
UN4213
UN4214
UN4215
UN4216
UN4217
UN4218
UN4219
UN4210
UN421D
UN421E
UN421F
UN421K
UN421L
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
5.1kΩ
10kΩ
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
1
2
3
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
R1
2.0±0.2
s
0.7±0.1
marking
+0.2
0.45–0.1
15.6±0.5
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
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