Transistors with built-in Resistor
UN4211/4212/4213/4214/4215/4216/4217/4218/
4219/4210/421D/421E/421F/421K/421L
Silicon NPN epitaxial planer transistor
For digital circuits
4.0±0.2
3.0±0.2
Unit: mm
s
Features
q
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
New S type package, allowing supply with the radial taping.
Resistance by Part Number
UN4211
UN4212
UN4213
UN4214
UN4215
UN4216
UN4217
UN4218
UN4219
UN4210
UN421D
UN421E
UN421F
UN421K
UN421L
(R
1
)
10kΩ
22kΩ
47kΩ
10kΩ
10kΩ
4.7kΩ
22kΩ
0.51kΩ
1kΩ
47kΩ
47kΩ
47kΩ
4.7kΩ
10kΩ
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
1
2
3
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
Internal Connection
R1
2.0±0.2
s
0.7±0.1
marking
+0.2
0.45–0.1
15.6±0.5
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
1
Transistors with built-in Resistor
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
s
Electrical Characteristics
Parameter
Collector cutoff current
UN4211
UN4212/4214/421E/421D
UN4213
Emitter
cutoff
current
UN4215/4216/4217/4210
UN421F/421K
UN4219
UN4218/421L
Collector to base voltage
Collector to emitter voltage
UN4211
Forward
current
transfer
ratio
UN4212/421E
UN4213/4214
UN4215*/4216*/4217*/4210*
UN421F/421D/4219
UN4218/421K/421L
Collector to emitter saturation voltage
Output voltage high level
Output voltage low level
UN4213/421K
UN421D
UN421E
Transition frequency
UN4211/4214/4215/421K
UN4212/4217
Input
resis-
tance
UN4213/421D/421E/4210
UN4216/421F/421L
UN4218
UN4219
UN4211/4212/4213/421L
UN4214
Resis-
tance
ratio
UN4218/4219
UN421D
UN421E
UN421F
UN421K
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
h
FE
V
CE
= 10V, I
C
= 5mA
80
160
30
20
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 10V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
R
1
(–30%)
47
4.7
0.51
1
0.8
0.17
0.08
R
1
/R
2
3.7
1.7
0.37
1.7
1.0
0.21
0.1
4.7
2.14
0.47
2.13
1.2
0.25
0.12
5.7
2.6
0.57
2.6
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
MHz
V
0.25
V
V
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN4215/4216/4217/4210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
Transistors with built-in Resistor
Common characteristics chart
P
T
— Ta
400
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
Total power dissipation P
T
(mW)
350
300
250
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN4211
I
C
— V
CE
160
140
I
B
=1.0mA
0.9mA
0.8mA
Ta=25˚C
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
120
100
80
60
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
100
–25˚C
0.2mA
40
20
0
0
2
4
6
8
10
12
25˚C
Ta=75˚C
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
3
Transistors with built-in Resistor
Characteristics charts of UN4212
I
C
— V
CE
160
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Ta=25˚C
140
I
B
=1.0mA
0.9mA
0.8mA
120
100
80
0.3mA
60
40
20
0
0
2
4
6
8
10
12
0.2mA
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
0.7mA
0.6mA
0.5mA
0.4mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
–25˚C
25˚C
Ta=75˚C
100
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN4213
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
400
Ta=25˚C
h
FE
— I
C
V
CE
=10V
Collector current I
C
(mA)
120
100
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
350
300
250
200
150
100
50
0
Ta=75˚C
25˚C
–25˚C
60
40
20
0
0
2
4
6
8
10
12
0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
Transistors with built-in Resistor
C
ob
— V
CB
6
UN4211/4212/4213/4214/4215/4216/4217/
4218/4219/4210/421D/421E/421F/421K/421L
I
O
— V
IN
V
IN
— I
O
V
O
=5V
Ta=25˚C
100
30
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN4214
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
=10V
30
10
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.1
25˚C
I
B
=1.0mA
Collector current I
C
(mA)
120
100
80
60
40
20
0
0
2
4
6
8
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
140
350
300
250
200
25˚C
150
–25˚C
100
50
0
Ta=75˚C
0.2mA
0.1mA
10
12
–25˚C
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
10000
f=1MHz
I
E
=0
Ta=25˚C
3000
I
O
— V
IN
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V )
Input voltage V
IN
(V)
Output current I
O
(mA)
5
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