FHT1815L datasheet, PDF - EEWORLD Datasheet

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FHT1815L: DescriptionSmall Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size65KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHT1815L Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

FHT1815L Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW NOISE
Maximum collector current (IC)	0.15 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE
Minimum DC current gain (hFE)	350
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	180 MHz

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General Purpose Transistors

DESCRIPTION & FEATURES

概述及特点

Excellent h

FE

Linearity h

FE

线性特性极½

h

FE

(0.1mA)/ h

FE

(2mA)=0.95(Typ.)

High高 h

FE

：h

FE

=70~700

Low Noise½噪声：NF=1dB (Typ.),10dB(Max.)

Complementary to FHT1015

与

FH1015

互补

SOT-23

FHT1815

PIN ASSIGNMENT

引脚说明

PIN NAME

FUNCTION

PIN NUMBER

引脚序号

管脚符号

功½

SOT-23

B

1

BASE

E

2

EMITTER

C

3

COLLECTOR

MAXIMUM RATINGS(T

a

=25℃)

最大额定值

CHARACTERISTIC

特性参数

Symbol

符号

Rating

额定值

Unit

单½

Collector-Emitter Voltage

集电极-发射极电压

V

CEO

50

Vdc

Collector-Base Voltage

集电极-基极电压

V

CBO

60

Vdc

Emitter-Base Voltage

发射极-基极电压

V

EBO

5.0

Vdc

Collector Current—Continuous

集电极电流-连续

I

C

150

mAdc

Base Current

基极电流

I

B

30

mAdc

THERMAL CHARACTERISTICS

热特性

CHARACTERISTIC

特性参数

Symbol

符号

Max

最大值

Unit

单½

Collector Power Dissipation

集电极耗散功率

P

c

300

mW

Junction and Storage Temperature结温和储存温度

T

j

, T

stg

150，-55 ~150

℃

DEVICE MARKING

打标

，FHT1815Y=BY（120~240）

，

h

FE

（1）FHT1815O=BO（70~140）

FHT1815G=BG（200~400）

，FHT1815L=BL（350~700）

ELECTRICAL CHARACTERISTICS

电特性

(T

A

=25℃ unless otherwise noted

如无特殊说明，温度为

25℃)

Type

典

Symbol

Test Condition

Min

Max

Unit

Characteristic

特性参数

符号

测试条件

最小值

最大值单½

型值

Collector Cutoff Current

集电极截止电流

Emitter Cutoff Current

发射极截止电流

Collector-Emitter Breakdown Voltage

集电极-发射极击穿电压

Collector-Base Breakdown Voltage

集电极-基极击穿电压

Emitter-Base Breakdown Voltage

发射极-基极击穿电压

DC Current Gain

直流电流增益

Collector-Emitter Saturation Voltage

集电极-发射极饱和压降

Base-Emitter Voltage

基极-发射极电压

Transition Frequency

特征频率

Collector Output Capacitance

输出电容

I

CBO

I

EBO

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

h

FE

V

CE(sat)

V

BE

f

T

C

ob

V

CB

=60V,I

E

=0

V

EB

=5V,I

C

=0

I

C

=1.0mA

I

C

=100µA

I

E

=100µA

V

CE

=6V,I

C

=2mA

I

C

=100mA,I

B

=10mA

V

CE

=5.0V,I

C

=10mA

V

CE

=5.0V,I

C

=10mA

V

CB

=10V,I

E

=0,

f=1MHz

—

50

60

5

70

—

100

—

180

4.0

0.1

—

700

0.25

0.82

—

7.0

µA

V

—

V

MHz

pF

1

FHT1815L Related Products

	FHT1815L	FHT1815Y	FHT1815	FHT1815O	FHT1815G
Description	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Parts packaging code	SOT-23	SOT-23	SOT-23	SOT-23	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Contacts	3	3	3	3	3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.15 A	0.15 A	0.15 A	0.15 A	0.15 A
Collector-emitter maximum voltage	50 V	50 V	50 V	50 V	50 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	350	120	70	70	200
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	180 MHz	180 MHz	180 MHz	180 MHz	180 MHz
Maker	Fenghua (HK) Electronics Ltd.	-	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.
Maximum power dissipation(Abs)	0.3 W	0.3 W	-	0.3 W	0.3 W

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