FHD1766 datasheet, PDF - EEWORLD Datasheet

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FHD1766: DescriptionSmall Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,; CategoryDiscrete semiconductor The transistor; File Size86KB，1 Pages; ManufacturerFenghua (HK) Electronics Ltd.

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FHD1766 Overview

Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,

FHD1766 Parametric

Parameter Name	Attribute value
Maker	Fenghua (HK) Electronics Ltd.
package instruction	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	32 V
Configuration	SINGLE
Minimum DC current gain (hFE)	82
JESD-30 code	R-PSSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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Medium Power Transistor(NPN)

DESCRIPTION & FEATURES

1) Low

V

CE (sat)

=0.5V(Typ)

(I

C

/

I

B

=2A/0.2A)

2) Epitaxial planar type,

NPN silicon transistor

概述及特點

FHD1766

SOT-89

PIN ASSIGNMENT

引腳說明

PIN NAME

FUNCTION

PIN NUMBER

引腳序號

管腳符號

功½

SOT-89

B

1

BASE

C

2

COLLECTOR

E

3

EMITTER

MAXIMUM RATINGS(T

a

=25℃)

最大額定值

CHARACTERISTIC

特性參數

Symbol

符號

Rating

額定值

Unit

單½

Collector-Emitter Voltage

集電極-發射極電壓

32

Vdc

V

CEO

Collector-Base Voltage

集電極-基極電壓

V

CBO

40

Vdc

Emitter-Base Voltage

發射極-基極電壓

5.0

Vdc

V

EBO

Collector Current

集電極電流

2

Adc

I

C

THERMAL CHARACTERISTICS

熱特性

CHARACTERISTIC

特性參數

Symbol

符號

Max

最大值

Unit

單½

Collector Power Dissipation

集電極耗散功率

P

c

500

mW

150，

T

J

℃

Junction and Storage Temperature結溫和儲存溫度

T

stg

-55 ~150

DEVICE MARKING

打標

FHD1766P=DBP(82~180)，FHD1766Q=DBQ(120~270)，FHD1766R=DBR(180~390)

ELECTRICAL CHARACTERISTICS

電特性

(T

A

=25℃ unless otherwise noted

如無特殊說明，溫度為

25℃)

Symbol

Test Condition

Min

Type

Max

Unit

Characteristic

特性參數

符號

測試條件

最小值典型值最大值單½

Collector-Emitter Breakdown Voltage

集電極-發射極擊穿電壓

Collector-Base Breakdown Voltage

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE

（

sat

）

f

T

C

Ob

I

C

=1.0mA

I

C

=50µA

I

E

=50µA

V

CB

=20V,I

E

=0

V

EB

=4V, I

C

=0

V

CE

=3V,I

C

=0.5A

I

C

=2A,I

B

=0.2A

V

CE

=5V,I

E

=50mA,

f =100MHz

V

CB

=10V,I

E

=0,

f=1MHZ

32

40

5.0

—

82

—

0.5

100

30

—

1

390

0.8

—

V

uA

集電極-基極擊穿電壓

Emitter-Base Breakdown Voltage

發射極-基極擊穿電壓

Collector Cutoff Current

集電極截止電流

Emitter Cutoff Current

發射極截止電流

DC Current Gain

直流電流增益

Collector-Emitter Saturation Voltage

集電極-發射極½和壓降

Transition Frequency

特徵頻率

Collect Output Capacitance

輸出電容

V

MH

Z

pF

1

FHD1766 Related Products

	FHD1766	FHD1766R	FHD1766Q	FHD1766P
Description	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,	Small Signal Bipolar Transistor, 2A I(C), 32V V(BR)CEO, 1-Element, NPN, Silicon,
package instruction	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3	SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Maximum collector current (IC)	2 A	2 A	2 A	2 A
Collector-emitter maximum voltage	32 V	32 V	32 V	32 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	82	180	120	82
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
Number of components	1	1	1	1
Number of terminals	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	100 MHz	100 MHz
Maker	Fenghua (HK) Electronics Ltd.	-	Fenghua (HK) Electronics Ltd.	Fenghua (HK) Electronics Ltd.

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