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UN412Y

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size77KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Download Datasheet Parametric Compare View All

UN412Y Overview

Composite Device - Transistors with built-in Resistor

UN412Y Parametric

Parameter NameAttribute value
MakerPanasonic
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO 1.49
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Transistors with built-in Resistor
UN4121/4122/4123/4124/412X/412Y
Silicon PNP epitaxial planer transistor
For digital circuits
q
q
s
Resistance by Part Number
q
q
q
q
q
q
UN4121
UN4122
UN4123
UN4124
UN412X
UN412Y
(R
1
)
2.2kΩ
4.7kΩ
10kΩ
2.2kΩ
0.27kΩ
3.1kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5.0kΩ
4.6kΩ
0.7±0.1
1
2
3
1.27 1.27
2.54±0.15
1 : Emitter
2 : Collector
3 : Base
New S Type Package
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–500
300
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
R1
Internal Connection
2.0±0.2
marking
+0.2
0.45–0.1
15.6±0.5
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
New S type package, allowing supply with the radial taping.
3.0±0.2
s
Features
4.0±0.2
Unit: mm
C
B
R2
E
1

UN412Y Related Products

UN412Y UN412X UN4124 UN4122 UN4123 UN4121
Description Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor
Maker Panasonic Panasonic Panasonic Panasonic Panasonic Panasonic
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO 1.49 BUILT IN BIAS RESISTOR RATIO 18.52 BUILT IN BIAS RESISTOR RATIO 4.54 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 50 20 60 50 60 40
JESD-30 code R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3 R-PSIP-T3
Number of components 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W 0.3 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
Is it Rohs certified? - - conform to conform to conform to conform to
Peak Reflow Temperature (Celsius) - - 260 260 260 260
Maximum time at peak reflow temperature - - 10 10 10 10
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