Small Signal Transistor Arrays
UN230
Transistor array to drive the small motor
s
Features
q
q
q
q
Small and lightweight
Low power consumption
Low-voltage drive
With 4 elements incorporated
6.5±0.3
10–0.4±0.1
Unit: mm
5.5±0.3
1
10
1.5±0.1
0.8
s
Applications
q
q
For motor drives
Small motor drive circuits in general
5
6
12°
6°
0 to 0.1
0.5
45°
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
I
CP
P
T
*
T
j
T
stg
(Ta=25±3˚C)
Ratings
±10
±10
±3
±4
0.5
150
–55 to +150
Unit
V
V
A
A
W
˚C
˚C
6°
0.5±0.2
7.7±0.3
Internal Connection
1
2
3
4
5
10
9
8
7
6
Note:
±
marks used above: +: NPN part, –: PNP part
* T
C
= 25˚C only when the elements are active
0.2
–0.05
12°
+0.1
8–0.9±0.1
SO–10C Package
1
Small Signal Transistor Arrays
UN230
s
Electrical Characteristics
Parameter
Collector to base voltage
(Ta=25˚C)
Symbol
V
CBO
V
CEO
I
CBO
h
FE
V
CE(sat)
f
T
C
ob
V
F
R
EB
Conditions
(NPN) I
C
= 10µA, I
E
= 0
(PNP) I
C
= –10µA, I
E
= 0
(NPN) I
C
= 1mA, I
B
= 0
(PNP) I
C
= –1mA, I
B
= 0
(NPN) V
CB
= 6V, I
E
= 0
(PNP) V
CB
= –6V, I
E
= 0
(NPN) V
CE
= 1V, I
C
= 0.5A*
(PNP) V
CE
= –1V, I
C
= – 0.5A*
(NPN) I
C
= 2A, I
B
= 50mA*
(PNP) I
C
= –2A, I
B
= –50mA*
(NPN) V
CB
= 6V, I
E
= –50mA, f = 200MHz
(PNP) V
CB
= –6V, I
E
= 50mA, f = 200MHz
(NPN) V
CB
= 6V, I
E
= 0, f = 1MHz
(PNP) V
CB
= –6V, I
E
= 0, f = 1MHz
(NPN) I
F
= 1A
(PNP) I
F
= –1A
–30%
10
150
150
50
70
1.5
1.5
+30%
200
200
min
10
–10
10
–10
1
–1
700
700
0.25
– 0.45
V
typ
max
Unit
V
Collector to emitter voltage
V
µA
Collector cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
MHz
Collector output capacitance
pF
Forward voltage (DC)
Bias resistance
*Pulse measurement
V
kΩ
Characteristics charts of PNP transistor block
P
T
— Ta
0.6
–6
I
C
— V
CE
–10
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=40
Total power dissipation P
T
(W)
0.5
–3
–1
–0.3
–0.1
–0.03
–0.01
–5
0.4
Collector current I
C
(A)
–4
Ta=75˚C
25˚C
–25˚C
0.3
–3
I
B
=–12mA
–10mA
–8mA
–6mA
0.2
–2
–4mA
–2mA
0.1
–1
–0.003
–0.001
–0.01 –0.03 –0.1 –0.3
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–1
–3
–10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
2
Small Signal Transistor Arrays
h
FE
— I
C
600
240
UN230
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=1V
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
–25˚C
300
200
f=1MHz
I
E
=0
Ta=25˚C
160
120
200
80
100
40
0
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
0
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Characteristics charts of NPN transistor block
P
T
— Ta
0.6
6
I
C
— V
CE
10
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
Ta=25˚C
I
C
/I
B
=40
Total power dissipation P
T
(W)
0.5
5
3
1
0.3
0.1
0.03
0.01
0.003
0.001
0.01 0.03
0.4
Collector current I
C
(A)
4
0.3
3
I
B
=12mA
10mA
8mA
Ta=75˚C
25˚C
–25˚C
0.2
2
6mA
4mA
0.1
1
2mA
0
0
20
40
60
80 100 120 140 160
0
0
2
4
6
8
10
12
0.1
0.3
1
3
10
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Collector current I
C
(A)
h
FE
— I
C
600
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=1V
240
f=1MHz
I
E
=0
Ta=25˚C
Forward current transfer ratio h
FE
500
Ta=75˚C
400
25˚C
–25˚C
200
160
300
120
200
80
100
40
0
0.01 0.03
0.1
0.3
1
3
10
0
1
3
10
30
100
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
3
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