3.0SMCJ26CA datasheet, PDF - EEWORLD Datasheet

3.0SMCJ26CA: Description3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB; CategoryDiscrete semiconductor diode; File Size161KB，4 Pages; ManufacturerFORMOSA; Websitehttp://www.formosams.com/

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3.0SMCJ26CA Overview

3000 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

Parameter Name	Attribute value
package instruction	SMC-F, 2 PIN
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage	31.9 V
Minimum breakdown voltage	28.9 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	3000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
polarity	BIDIRECTIONAL
Maximum power dissipation	6.5 W
Maximum repetitive peak reverse voltage	26 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Base Number Matches	1

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