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3.0SMCJ60A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CategoryDiscrete semiconductor    diode   
File Size161KB,4 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric View All

3.0SMCJ60A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

3.0SMCJ60A Parametric

Parameter NameAttribute value
MakerFORMOSA
package instructionSMC-F, 2 PIN
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage73.7 V
Minimum breakdown voltage66.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation3000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation6.5 W
Maximum repetitive peak reverse voltage60 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
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