万和兴电子有限公司 www.whxpcb.com
AO4409
30V P-Channel MOSFET
General Description
The AO4409 uses advanced trench technology to provide
excellent R
DS(ON)
, and ultra-low low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V
DS
I
D
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-10V)
R
DS(ON)
(at V
GS
=-4.5V)
-30V
-15A
< 7.5mΩ
< 12mΩ
* RoHS and Halogen-Free Compliant
100% UIS Tested
100% R
g
Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
S
G
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Maximum
-30
±20
-15
-12.8
-80
30
135
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.3mH
C
T
A
=25°
C
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Rev.8.0: July 2013
www.aosmd.com
Page 1 of 5
AO4409
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-15A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
=-4.5V, I
D
=-10A
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
35
T
J
=125°
C
-1.4
-80
6.2
8.2
9.5
50
-0.71
-1
-5
5270
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
945
745
2
100
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
51.5
14.5
23
14
V
GS
=-10V, V
DS
=-15V, R
L
=1Ω,
R
GEN
=3Ω
16.5
Min
-30
Typ
Max
Units
V
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
-5
-25
±100
-1.9
-2.7
7.5
11.5
12
µA
nA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
6400
3
120
Ω
nC
nC
nC
nC
ns
ns
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
t
D(off)
t
f
t
rr
Q
rr
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
76.5
37.5
36.7
28
45
ns
ns
ns
nC
I
F
=-15A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge I
F
=-15A, dI/dt=100A/µs
A. The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using
≤
10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C. Ratings are based on low frequency and duty cycles to keep
initialT
J
=25°C.
D. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in
2
FR-4 board with
2oz. Copper, assuming a maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.8.0: July 2013
www.aosmd.com
Page 2 of 5
AO4409
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
-I
D
(A)
30
20
10
V
GS
=-3V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
12
10
R
DS(ON)
(mΩ)
Ω
8
6
V
GS
=-10V
4
2
0
15
20
25
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
5
10
Normalized On-Resistance
V
GS
=-4.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
-4V
-4.5V
-6V
-10V
-I
D
(A)
-3.5V
40
30
20
10
125°C
25°C
60
V
DS
=-5V
50
1.6
I
D
=-15A
1.4
V
GS
=-10V
1.2
1
V
GS
17
5
2
10
=-4.5V
0.8
0
25
50
75
100
125
150
175
0
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
18
(Note E)
20
I
D
=-15A
1.0E+02
1.0E+01
15
125°
R
DS(ON)
(mΩ)
Ω
10
25°
5
-I
S
(A)
1.0E+00
1.0E-01
1.0E-02
25
°
40
125°
1.0E-03
1.0E-04
0
2
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
4
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
Rev.8.0: July 2013
www.aosmd.com
Page 3 of 5
AO4409
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-15A
8
6000
Capacitance (pF)
-V
GS
(Volts)
6
5000
4000
3000
2000
2
1000
C
rss
0
0
60
80
100
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
40
120
0
0
10
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
30
C
oss
C
iss
8000
7000
4
1000.0
100.0
10000
T
A
=25°C
100µs
1ms
Power (W)
1000
-I
D
(Amps)
10.0
1.0
0.1
0.0
R
DS(ON)
limited
100
10ms
T
J(Max)
=150°C
T
A
=25°C
10
10s
DC
1
0.00001
0.001
0.1
10
1000
0.01
0.1
1
-V
DS
(Volts)
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
0.01
Single Pulse
P
D
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.8.0: July 2013
www.aosmd.com
Page 4 of 5
AO4409
万和兴电子有限公司 www.whxpcb.com
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
VDC
VDC
DUT
Vgs
Ig
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vgs
Vgs
Rg
DUT
VDC
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
Vds
Id
Vgs
Rg
DUT
Vgs
Vgs
Vgs
VDC
Diode Recovery Test Circuit & Waveforms
Vds +
DUT
Vgs
t
rr
Vds -
Isd
Vgs
Ig
L
VDC
+
Vdd
-
-Vds
Rev.8.0: July 2013
www.aosmd.com
+
-
-
+
Charge
t
on
t
d(on)
t
r
t
d(off)
t
off
t
f
+
-
-
+
-
Vds
Qgs
Qgd
Vdd
90%
10%
E
AR
= 1/2 LI
AR
2
Vds
BV
DSS
Vdd
Id
I
AR
Q
rr
= - Idt
-Isd
-I
F
dI/dt
-I
RM
Vdd
Page 5 of 5
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