万和兴电子有限公司 www.whxpcb.com
AO4447
30V P-Channel MOSFET
General Description
The AO4447 uses advanced trench technology to
provide excellent R
DS(ON)
, and ultra-low low gate
charge. This device is suitable for use as a load
switch. The device is ESD protected.
Product Summary
V
DS
(V) = -30V
I
D
= -15 A (V
GS
= -10V)
Max R
DS(ON)
< 7.5mΩ (V
GS
= -10V)
Max R
DS(ON)
< 12mΩ (V
GS
= -4V)
ESD Rating: 4KV HBM
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
D
Bottom View
D
G
G
S
S
S
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Maximum
-30
±20
-15
-13.6
-60
40
240
3.1
2
-55 to 150
Units
V
V
A
A
mJ
W
°
C
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.3mH
T
A
=25°
C
Power Dissipation
A
T
A
=70°
C
G
B
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
26
50
14
Max
40
75
24
Units
°
C/W
°
C/W
°
C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
万和兴电子有限公司 www.whxpcb.com
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=-4V, I
D
=-13A
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-15A
I
S
=-1A,V
GS
=0V
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-10V, V
DS
=-5V
V
GS
=-10V, I
D
=-15A
C
T
J
=125°
-0.9
-60
6.7
9.4
9.2
60
-0.69
-1
5.5
5500
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
745
473
3.1
88.8
V
GS
=-10V, V
DS
=-15V, I
D
=-15A
45.2
10.1
19.4
12
V
GS
=-10V, V
DS
=-15V, R
L
=1.7Ω,
R
GEN
=3Ω
I
F
=-15A, dI/dt=100A/µs
2
Min
-30
Typ
Max
Units
V
-1
-10
±10
-1.25
-1.6
7.5
12
12
µA
µA
V
A
mΩ
mΩ
S
V
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
6600
4
120
60
Ω
nC
nC
nC
nC
ns
ns
ns
ns
SWITCHING PARAMETERS
Q
g
Total Gate Charge
Q
g
(4.5V)
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Charge
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-15A, dI/dt=100A/µs
11.5
100
40
46.6
67.7
60
ns
nC
A: The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25° The value in any given application depends on the user's specific board design.
C.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with
T
A
=25° The SOA curve provides a single pulse rating.
C.
F.The current rating is based on the t
≤
10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles such that Tj(start)=25C for each pulse.
Rev7: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
-10V
50
40
-I
D
(A)
30
20
25°C
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
12
Normalized On-Resistance
1.6
1.4
1.2
1
0.8
0.6
0
5
10
15
20
25
-50
-25
0
25
50
75
100 125 150 175
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=-4V
I
D
=-13A
V
GS
=-2.5V
5
-3.5V
-3V
-4V
15
-I
D
(A)
20
125°C
25
V
DS
=-5V
10
0
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
R
DS(ON)
(m
Ω
)
10
V
GS
=-4V
V
GS
=-10V
I
D
=-15A
8
V
GS
=-10V
6
30
25
R
DS(ON)
(m
Ω
)
20
-I
S
(A)
15
10
5
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
1.0E+01
I
D
=-15A
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°C
125°C
25°C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4447
万和兴电子有限公司 www.whxpcb.com
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-15V
I
D
=-15A
Capacitance (pF)
8000
7000
C
iss
6000
5000
4000
3000
2000
1000
0
0
60
80
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
40
100
0
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
C
rss
8
-V
GS
(Volts)
6
4
C
oss
2
100.0
10µs
R
DS(ON)
limited
10.0
-I
D
(Amps)
100µs
1ms
100
80
Power (W)
60
40
20
T
J(Max)
=150°C
T
A
=25°C
10ms
0.1s
1s
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
10s
DC
10
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1
100
0
0.001
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=40°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
T
0.01
0.00001
Single Pulse
0.0001
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
0.01
100
1000
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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