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DB105

Description
1 A, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size298KB,2 Pages
ManufacturerGaomi Xinghe Electronics
Websitehttp://www.sddzg.com
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DB105 Overview

1 A, SILICON, BRIDGE RECTIFIER DIODE

星合电子
XINGHE ELECTRONICS
GLASS PASSIVATED
BRIDEG RECTIFIERS
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
DB101 thru DB107
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.0
Amperes
DB
.335(8.5)
.307(7.8)
-
~
.346(8.8)
.323(8.2)
+
.256(6.5)
.244(6.2)
technique results in inexpensive product
Lead tin Pb/Sn copper
The plastic material has UL flammability
~
.350(8.9)
.300(7.6)
classification 94V-0
MECHANICAL DATA
Polarit: As marked on Body
Weight: 0.02 ounces,0.38 gras
Mounting position: Any
.022(0.55)
.018(0.45)
.134(3.4)
.124(3.15)
.193(4.9)
.155(3.9)
.205(5.2)
.195(5.0)
SPACING
.059
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.0A DC
Maximum DC Reverse Current
at Rated DC Bolcking Voltage
I
2
t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance Per Element(Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25℃
@T
J
=125℃
@T
A
=40℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
DB101
50
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
1.0
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
50
1.1
10
500
10.4
25
40
-55 to +150
-55 to +150
A
V
uA
A
2
s
pF
℃/W
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance from junction to ambient mounted on P.C.B
with 0.5*0.5"(13*13mm)copper pads.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

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DB105 DB102 DB103 DB104 DB106 DB107 DB101
Description 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
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