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DB151

Description
BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size298KB,2 Pages
ManufacturerGaomi Xinghe Electronics
Websitehttp://www.sddzg.com
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DB151 Overview

BRIDGE RECTIFIER DIODE

DB151 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typeBRIDGE RECTIFIER DIODE
星合电子
XINGHE ELECTRONICS
.
DB 151 thru DB157
REVERSE VOLTAGE
- 50
to
1000
Volts
FORWARD CURRENT
- 1.5
Amperes
DB
.335(8.5)
.307(7.8)
FEATURES
Rating to 1000V PRV
Ideal for printed circuit board
Low forward voltage drop,high current capability
Reliable low cost construction utilizing molded plastic
-
~
.346(8.8)
.323(8.2)
+
.256(6.5)
.244(6.2)
technique results in inexpensive product
Lead tin Pb/Sn copper
The plastic material has UL flammability
~
.350(8.9)
.300(7.6)
classification 94V-0
MECHANICAL DATA
Polarit:As marked on Body
Weight:0.02 ounces,0.38 gras
Mounting
position:Any
.022(0.55)
.018(0.45)
.205(5.2)
.195(5.0)
SPACING
.134(3.4)
.124(3.15)
.193(4.9)
.155(3.9)
.059
(1.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 1.5A DC
Maximum DC Reverse Current @T
J
=25℃
at Rated DC Bolcking Voltage
I
2
t Rating for Fusing(t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Tyical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@T
J
=125℃
@T
A
=40℃
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
DB151
50
35
50
DB152
100
70
100
DB153
200
140
200
DB154
400
280
400
1.5
DB155
600
420
600
DB156
800
560
800
DB157
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJA
T
J
T
STG
50
1.1
10
500
10.4
25
40
-55 to +150
-55 to +150
A
V
uA
A
2
s
pF
℃/W
Note:1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal resistance from junction to ambient mounted on P.C.B.
with 0.5*0.5"(13*13mm) copper pads.
1
GAOMI XINGHE ELECTRONICSCO.,LTD.    WWW.SDDZG.COM     TEL:0536-2210359       QQ:464768017

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DB151 DB152 DB153 DB155 DB156 DB157
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