Transistors with built-in Resistor
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Silicon NPN epitaxial planer transistor
For digital circuits
0.65±0.15
2.8
–0.3
+0.2
Unit: mm
0.65±0.15
1.5
–0.05
+0.25
s
Features
0.95
q
2
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
Marking Symbol (R
1
)
UN2211
8A
10kΩ
UN2212
8B
22kΩ
UN2213
8C
47kΩ
UN2214
8D
10kΩ
UN2215
8E
10kΩ
UN2216
8F
4.7kΩ
UN2217
8H
22kΩ
UN2218
8I
0.51kΩ
UN2219
8K
1kΩ
UN2210
8L
47kΩ
UN221D
8M
47kΩ
UN221E
8N
47kΩ
UN221F
8O
4.7kΩ
UN221K
8P
10kΩ
UN221L
8Q
4.7kΩ
UN221M
EL
2.2kΩ
UN221N
EX
4.7kΩ
UN221T
EZ
22kΩ
UN221V
FD
2.2kΩ
UN221Z
FF
4.7kΩ
(R
2
)
10kΩ
22kΩ
47kΩ
47kΩ
—
—
—
5.1kΩ
10kΩ
—
10kΩ
22kΩ
10kΩ
4.7kΩ
4.7kΩ
47kΩ
47kΩ
47kΩ
2.2kΩ
22kΩ
1.1
–0.1
1:Base
2:Emitter
3:Collector
EIAJ:SC-59
Mini Type Package
Internal Connection
R1
0 to 0.1
0.1 to 0.3
0.4±0.2
0.8
C
B
R2
E
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
50
50
100
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
0.16
–0.06
+0.2
+0.1
s
Resistance by Part Number
0.4
–0.05
+0.1
q
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
2.9
–0.05
1
1.9±0.2
+0.2
0.95
3
1.45
1
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s
Electrical Characteristics
Parameter
Collector cutoff current
UN2211
UN2212/2214/221E/221D/221M/221N/221T
UN2213
Emitter
cutoff
current
UN2215/2216/2217/2210
UN221F/221K
UN2219
UN2218/221L/221V
UN221Z
Collector to base voltage
Collector to emitter voltage
UN2211
UN2212/221E
Forward
current
transfer
ratio
UN2213/2214/221M
UN2215*/2216*/2217*/2210*
UN221F/221D/2219
UN2218/221K/221L
UN221N/221T
UN221V
Collector to emitter saturation voltage
UN221V
Output voltage high level
Output voltage low level
UN2213/221K
UN221D
UN221E
Transition frequency
UN2211/2214/2215/221K
UN2212/2217/221T
Input
resis-
tance
UN2213/221D/221E/2210
UN2216/221F/221L/221N/221Z
UN2218
UN2219
UN221M/221V
(Ta=25˚C)
Symbol
I
CBO
I
CEO
Conditions
V
CB
= 50V, I
E
= 0
V
CE
= 50V, I
B
= 0
min
typ
max
0.1
0.5
0.5
0.2
0.1
I
EBO
V
EB
= 6V, I
C
= 0
0.01
1.0
1.5
2.0
0.4
V
CBO
V
CEO
I
C
= 10µA, I
E
= 0
I
C
= 2mA, I
B
= 0
50
50
35
60
80
h
FE
V
CE
= 10V, I
C
= 5mA
160
30
20
80
60
V
CE(sat)
V
OH
I
C
= 10mA, I
B
= 0.3mA
I
C
= 10mA, I
B
= 1.5mA
V
CC
= 5V, V
B
= 0.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 2.5V, R
L
= 1kΩ
V
OL
V
CC
= 5V, V
B
= 3.5V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 10V, R
L
= 1kΩ
V
CC
= 5V, V
B
= 6V, R
L
= 1kΩ
f
T
V
CB
= 10V, I
E
= –2mA, f = 200MHz
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
kΩ
4.9
0.2
0.2
0.2
0.2
MHz
V
0.04
400
200
0.25
0.25
V
V
—
460
V
V
mA
Unit
µA
µA
* h
FE
rank classification (UN2215/2216/2217/2210)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
2
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
s
Electrical Characteristics (continued)
Parameter
UN2211/2212/2213/221L
UN2214
UN2218/2219
UN221D
Resis-
tance
ratio
UN221E
UN221F/221T
UN221K
UN221M
UN211N
UN211V
UN211Z
R
1
/R
2
Symbol
(Ta=25˚C)
Conditions
min
0.8
0.17
0.08
typ
1.0
0.21
0.1
4.7
2.14
0.47
2.13
0.047
0.1
1.0
0.21
max
1.2
0.25
0.12
Unit
3
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Common characteristics chart
P
T
— Ta
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
20
40
60
80 100 120 140 160
Ambient temperature Ta (˚C)
Characteristics charts of UN2211
I
C
— V
CE
160
140
I
B
=1.0mA
0.9mA
0.8mA
Ta=25˚C
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
120
100
80
60
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
100
–25˚C
0.2mA
40
20
0
0
2
4
6
8
10
12
25˚C
Ta=75˚C
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
300
100
30
10
3
Input voltage V
IN
(V)
0.6
0.8
1.0
1.2
1.4
1000
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
UN2211/2212/2213/2214/2215/2216/2217/2218/2219/2210/
Transistors with built-in Resistor 221D/221E/221F/221K/221L/221M/221N/221T/221V/221Z
Characteristics charts of UN2212
I
C
— V
CE
160
V
CE(sat)
— I
C
100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
=10V
Ta=25˚C
140
I
B
=1.0mA
0.9mA
0.8mA
120
100
80
0.3mA
60
40
20
0
0
2
4
6
8
10
12
0.2mA
Collector to emitter saturation voltage V
CE(sat)
(V)
30
10
3
1
0.3
0.1
–25˚C
0.03
0.01
0.1
0.7mA
0.6mA
0.5mA
0.4mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
Ta=75˚C
200
25˚C
–25˚C
25˚C
Ta=75˚C
100
0.1mA
0
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25˚C
10000
3000
V
O
=5V
Ta=25˚C
100
30
V
IN
— I
O
V
O
=0.2V
Ta=25˚C
Collector output capacitance C
ob
(pF)
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
1000
300
100
30
10
3
10
3
1
0.3
0.1
0.03
0.01
0.1
3
2
1
0
0.1
0.3
1
3
10
30
100
1
0.4
0.6
0.8
1.0
1.2
1.4
0.3
1
3
10
30
100
Collector to base voltage
V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UN2213
I
C
— V
CE
160
100
V
CE(sat)
— I
C
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
400
Ta=25˚C
h
FE
— I
C
V
CE
=10V
Collector current I
C
(mA)
120
100
80
0.9mA
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
30
10
3
1
0.3
25˚C
0.1
0.03
0.01
0.1
–25˚C
Ta=75˚C
Forward current transfer ratio h
FE
140
I
B
=1.0mA
350
300
250
200
150
100
50
0
Ta=75˚C
25˚C
–25˚C
60
40
20
0
0
2
4
6
8
10
12
0.2mA
0.1mA
0.3
1
3
10
30
100
1
3
10
30
100
300
1000
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
5
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