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GBU808

Description
8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size812KB,2 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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GBU808 Overview

8 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE

GBU808 Parametric

Parameter NameAttribute value
Number of terminals4
Number of components4
Minimum breakdown voltage800 V
Maximum average input current8 A
Processing package descriptionROHS COMPLIANT, PLASTIC, GBU, 4 PIN
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureBridge, 4 ELEMENTS
Shell connectionisolation
Diode component materialssilicon
Diode typebridge rectifier diode
Phase1
Maximum repetitive peak reverse voltage800 V
Maximum non-repetitive peak forward current200 A
4.0/6.0/8.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER
GBU4/GBU6/GBU8 SERIES
Features
Glass Passivated Die Construction
Low Forward Voltage Drop
High Current Capability
High Surge Current Capability
Designed for Surface Mount Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
Formosa MS
58
0
Mechanical Data
Case: G B U , Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: As Marked on Case
Weight:8.0 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
MS
F
int
K
e
13
r
68
1
30
0
!
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
GBU
4005
6005
8005
50
35
@T
A
=25°C unless otherwise specified
Characteristic
Symbol
GBU
401
601
801
100
70
GBU
402
602
802
200
140
GBU
404
604
804
400
280
GBU
406
606
806
600
420
GBU
408
608
808
800
560
GBU
410
610
810
1000
700
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@T
A
= 40°C
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
V
V
A
A
V
µA
4.0/6.0/8.0
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage per element
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 4.0/6.0/8.0A
@T
A
= 25°C
@T
A
= 125°C
I
FSM
V
FM
I
RM
C
j
R
θJA
R
θJL
T
j
, T
STG
150/175/200
1.1
5.0
500
100/211/211
20/17/21
4.0
-65 to +150
45/94/94
Typical Junction Capacitance per element (Note 1)
Typical Thermal Resistance per leg (Note 2)
Operating and Storage Temperature Range
pF
°C/W
°C
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
2. Mounted on PC board with 13mm
2
copper pad.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2008/02/10
Revised Date
2010/03/10
Revision
B
Page.
2
Page 1
DS-222645

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