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HER506

Description
RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size442KB,2 Pages
ManufacturerGaomi Xinghe Electronics
Websitehttp://www.sddzg.com
Download Datasheet Parametric Compare View All

HER506 Overview

RECTIFIER DIODE

HER506 Parametric

Parameter NameAttribute value
stateACTIVE
Diode typerectifier diode
星合电子
XINGHE ELECTRONICS
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor, free
wheeling, and polarity protection application.
HER501 - HER508
5.0 AMP. High Efficiency Rectifiers
DO-201AD
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V0 rate flame retardant
Lead: Pure tin plated, lead free, solderable per
MIL-STD-202, method 208 guaranteed
Polarity: Color band denotes cathode
High temperature soldering guaranteed:
o
260 C/10 seconds/.375”,(9.5mm) lead
lengths at 5 lbs., (2.3kg) tension
Weight: 1.65grams
Dimensions in inches and (millimeters)
Maximum Rating and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375 (9.5mm) lead length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms single
half sine-wave superimposed on rated load
(JEDEC method )
Maximum Instantaneous Forward Voltage
@5.0A
Maximum DC Reverse Current
o
@Ta=25 C at Rated DC Blocking Voltage
o
@ Ta=125 C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Typical Thermal Resistance
Operating Temperature Range
Symbol HER
501
V
RRM
50
V
RMD
35
V
DC
50
HER
502
100
70
100
HER
503
200
140
200
HER
504
300
210
300
HER
505
400
280
400
HER
506
600
420
600
HER
507
800
560
800
HER
Units
508
1000
V
700
V
1000
V
A
A
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
50
100
1.0
5.0
200
1.3
10
250
75
65
40
-65 to +150
-65 to +150
1.7
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and applied reverse voltage of 4.0 V D.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
T
J
T
STG
1
GAOMI XINGHE ELECTRONICSCO.,LTD. WWW.SDDZG.COM  TEL:0536-2210359  QQ:464768017

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HER506 HER501 HER502 HER503 HER504 HER505 HER507 HER508
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