Small Signal Transistor Arrays
UN216
Transistor array to drive the small motor
s
Features
q
q
q
q
Small and lightweight
Low power consumption (low V
CE(sat)
transistor used)
Low-voltage drive
With 6 elements incorporated. (SO–14)
1
6.5±0.3
14-0.4±0.1
Unit: mm
5.5±0.3
14
1.5±0.1
0.8
s
Applications
q
q
q
q
0 to 0.1
0.5
6˚
7.7±0.3
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
*
T
j
T
stg
(Ta=25±2˚C)
Ratings
±12
±10
±7
±3
0.5
150
–55 to +150
Unit
V
V
V
A
W
˚C
˚C
1
2
3
4
5
6
7
14
13
12
11
10
9
8
+0.1
45˚
0.5±0.2
0.2
–0.05
Video cameras
Cameras
Portable CD players
Small motor drive circuits in general for electronic equipment.
7
8
12˚
6˚
12˚
12-0.9±0.1
SO–14 Package
Internal Connection
Note:
±
marks used above: +: NPN part, –: PNP part
* T
C
= 25˚C only when the elements are active
1
Small Signal Transistor Arrays
UN216
s
Electrical Characteristics
Parameter
Collector cutoff current
(Ta=25±2˚C)
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE
V
CE(sat)1
f
T
C
ob
V
F
Conditions
(NPN) V
CB
= 10V
(PNP) V
CB
= –10V
(NPN) I
C
= 10µA
(PNP) I
C
= –10µA
(NPN) I
C
= 1mA
(PNP) I
C
= –1mA
(NPN) I
E
= 10µA
(PNP) I
E
= –10µA
(NPN) V
CE
= 1V, I
C
= 0.5A*
(PNP) V
CE
= –1V, I
C
= – 0.5A*
(NPN) I
C
= 2A, I
B
= 50mA
(PNP) I
C
= –2A, I
B
= –50mA
(NPN) V
CB
= 6V, I
E
= –50mA, f = 200MHz
(PNP) V
CB
= –6V, I
E
= 50mA, f = 200MHz
(NPN) V
CB
= 10V, I
E
= 0, f = 1MHz
(PNP) V
CB
= 10V, I
E
= 0, f = 1MHz
(NPN) I
F
= 1A
(PNP) I
F
= –1A
150
150
50
65
1.5
1.5
12
–12
10
–10
7
–7
200
200
800
800
0.25
– 0.45
V
min
typ
max
1
–1
Unit
µA
Collector to base voltage
V
Collector to emitter voltage
V
Emitter to base voltage
V
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
MHz
Collector output capacitance
pF
Forward voltage (DC)
*Pulse measurement
V
Characteristics charts of PNP transistor block
P
T
— Ta
0.6
–6
Ta=25˚C
I
C
— V
CE
–6
I
C
— V
BE
V
CE
=–1V
–5
Total power dissipation P
T
(W)
0.5
–5
Collector current I
C
(A)
Collector current I
C
(A)
0.4
–4
–4
Ta=75˚C
–3
25˚C
–25˚C
0.3
–3
I
B
=–8mA –7mA
–6mA
0.2
–2
–5mA
–4mA
–3mA
–2mA
–2
0.1
–1
–1mA
–1
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
0
0
–0.4 –0.8
–1.2
–1.6
–2.0 –2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
2
Small Signal Transistor Arrays
V
CE(sat)
— I
C
–10
UN216
h
FE
— I
C
C
ob
— V
CB
V
CE
=–1V
320
Collector to emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=40
800
Collector output capacitance C
ob
(pF)
–1
–0.3
–0.1
–0.03
–0.01
Ta=75˚C
25˚C
–25˚C
Forward current transfer ratio h
FE
–3
700
600
500
400
300
200
100
0
–0.01 –0.03 –0.1 –0.3
Ta=75˚C
25˚C
–25˚C
280
240
200
160
120
80
40
0
–0.1 –0.3
f=1MHz
I
E
=0
Ta=25˚C
–0.003
–0.001
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
–1
–3
–10
–1
–3
–10
–30
–100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
Characteristics charts of NPN transistor block
P
T
— Ta
0.6
I
C
— V
CE
3.0
Ta=25˚C
6
I
C
— V
BE
V
CE
=1V
5
Total power dissipation P
T
(W)
0.5
2.5
Collector current I
C
(A)
Collector current I
C
(A)
0.4
2.0
I
B
=8mA
1.5
7mA
6mA
5mA
4mA
3mA
0.5
2mA
1mA
4
Ta=75˚C
3
25˚C
–25˚C
0.3
0.2
1.0
2
0.1
1
0
0
20
40
60
80 100 120 140 160
0
0
1
2
3
4
5
6
0
0
0.4
0.8
1.2
1.6
2.0
2.4
Ambient temperature Ta (˚C)
Collector to emitter voltage V
CE
(V)
Base to emitter voltage V
BE
(V)
V
CE(sat)
— I
C
10
h
FE
— I
C
I
C
/I
B
=40
800
C
ob
— V
CB
Collector output capacitance C
ob
(pF)
V
CE
=1V
160
140
120
100
80
60
40
20
0
0.1
f=1MHz
I
E
=0
Ta=25˚C
Collector to emitter saturation voltage V
CE(sat)
(V)
3
1
0.3
Ta=75˚C
0.1
0.03
0.01
0.003
0.001
0.01 0.03
25˚C
–25˚C
Forward current transfer ratio h
FE
700
600
500
400
–25˚C
300
200
100
0
0.01 0.03
Ta=75˚C
25˚C
0.1
0.3
1
3
10
0.1
0.3
1
3
10
0.3
1
3
10
30
100
Collector current I
C
(A)
Collector current I
C
(A)
Collector to base voltage V
CB
(V)
3
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