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UN2123

Description
Composite Device - Transistors with built-in Resistor
CategoryDiscrete semiconductor    The transistor   
File Size78KB,6 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric Compare View All

UN2123 Overview

Composite Device - Transistors with built-in Resistor

UN2123 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Parts packaging codeSC-59
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Transistors with built-in Resistor
UN2121/2122/2123/2124/212X/212Y
Silicon PNP epitaxial planer transistor
For digital circuits
s
Features
q
2.9
–0.05
2.8
–0.3
0.65±0.15
+0.2
Unit: mm
0.65±0.15
1.5
–0.05
+0.25
0.95
q
1.9±0.2
0.95
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
Mini type package, allowing downsizing of the equipment and
automatic insertion through tape packing and magazine packing.
1
+0.2
3
1.45
0 to 0.1
2
s
Resistance by Part Number
1.1
–0.1
+0.2
q
q
q
q
q
q
UN2121
UN2122
UN2123
UN2124
UN212X
UN212Y
Marking Symbol (R
1
)
7A
2.2kΩ
7B
4.7kΩ
7C
10kΩ
7D
2.2kΩ
7I
0.27kΩ
7Y
3.1kΩ
(R
2
)
2.2kΩ
4.7kΩ
10kΩ
10kΩ
5kΩ
4.6kΩ
0.1 to 0.3
0.4±0.2
1:Base
2:Emitter
3:Collector
0.8
EIAJ:SC-59
Mini Type Package
s
Absolute Maximum Ratings
Parameter
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
(Ta=25˚C)
Ratings
–50
–50
–500
200
150
–55 to +150
Unit
V
V
mA
mW
˚C
˚C
R1
Internal Connection
C
B
R2
E
0.16
–0.06
+0.1
0.4
–0.05
+0.1
1

UN2123 Related Products

UN2123 UN212Y UN212X UN2124 UN2121
Description Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor Composite Device - Transistors with built-in Resistor
Is it Rohs certified? conform to conform to conform to conform to conform to
Maker Panasonic Panasonic Panasonic Panasonic Panasonic
Parts packaging code SC-59 SC-59 SC-59 SC-59 SC-59
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features BUILT IN BIAS RESISTOR RATIO IS 1 BUILT IN BIAS RESISTOR RATIO 1.48 BUILT IN BIAS RESISTOR RATIO 18.52 BUILT IN BIAS RESISTOR RATIO 4.54 BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC) 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 50 V 50 V 50 V 50 V 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 60 50 20 60 40
JESD-30 code R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Polarity/channel type PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.2 W 0.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature 10 10 10 10 10
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz 200 MHz
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