EEWORLDEEWORLDEEWORLD

Part Number

Search

VS-MBR3045CT-1PbF

Description
15 A, 45 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size2MB,5 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Compare View All

VS-MBR3045CT-1PbF Online Shopping

Suppliers Part Number Price MOQ In stock  
VS-MBR3045CT-1PbF - - View Buy Now

VS-MBR3045CT-1PbF Overview

15 A, 45 V, SILICON, RECTIFIER DIODE

VS-MBRB30..CTPbF, VS-MBR30..CT-1PbF Series
VS-MBRB30..CTPbF
VS-MBR30..CT-1PbF
FEATURES
150 °C T
J
operation
Low forward voltage drop
High frequency operation
Center tap D
2
PAK and TO-262 packages
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
Halogen-free according to IEC 61249-2-21 definition
Compliant to RoHS directive 2002/95/EC
AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
2
1 Common
3
Anode cathode Anode
2
1 Common
3
Anode cathode Anode
D
2
PAK
TO-262
DESCRIPTION
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
2 x 15 A
35 V/45 V
100 mA at 125 °C
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
t
p
= 5 μs sine
20 Apk, T
J
= 125 °C
Range
CHARACTERISTICS
Rectangular waveform (per device)
T
C
= 123 °C (per leg)
VALUES
30
30
35/45
1020
0.6
- 65 to 150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-MBRB3035CTPbF
VS-MBR3035CT-1PbF
35
VS-MBRB3045CTPbF
VS-MBR3045CT-1PbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average
forward current
per leg
per device
SYMBOL
I
F(AV)
I
FRM
TEST CONDITIONS
T
C
= 123 °C, rated V
R
Rated V
R
, square wave, 20 kHz, T
C
= 123 °C
5 μs sine or 3 μs
rect. pulse
Following any rated load condition
and with rated V
RRM
applied
VALUES
15
30
30
1020
200
10
2
mJ
A
A
UNITS
Peak repetitive forward current per leg
Non-repetitive peak surge current
I
FSM
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
T
J
= 25 °C, I
AS
= 2 A, L = 5 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Non-repetitive avalanche energy per leg
Repetitive avalanche current per leg
E
AS
I
AR
www.kersemi.com
1

VS-MBR3045CT-1PbF Related Products

VS-MBR3045CT-1PbF MBR3045CTP VS-MBR3035CT-1PbF VS-MBRB3035CTPbF VS-MBRB3045CTPbF
Description 15 A, 45 V, SILICON, RECTIFIER DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-262AA 15 A, 35 V, SILICON, RECTIFIER DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1854  2417  1676  234  1103  38  49  34  5  23 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号