KM736V847T-8T datasheet, PDF - EEWORLD Datasheet

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KM736V847T-8T: DescriptionZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100; Categorystorage storage; File Size386KB，17 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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KM736V847T-8T Overview

ZBT SRAM, 256KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

KM736V847T-8T Parametric

Parameter Name	Attribute value
Maker	SAMSUNG
Objectid	1902863079
Parts packaging code	QFP
package instruction	LQFP,
Contacts	100
Reach Compliance Code	unknown
ECCN code	3A991.B.2.A
compound_id	9943861
Maximum access time	8.5 ns
Other features	FLOW-THROUGH ARCHITECTURE
JESD-30 code	R-PQFP-G100
length	20 mm
memory density	9437184 bit
Memory IC Type	ZBT SRAM
memory width	36
Number of functions	1
Number of terminals	100
word count	262144 words
character code	256000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX36
Package body material	PLASTIC/EPOXY
encapsulated code	LQFP
Package shape	RECTANGULAR
Package form	FLATPACK, LOW PROFILE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	1.6 mm
Maximum supply voltage (Vsup)	3.465 V
Minimum supply voltage (Vsup)	3.135 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	GULL WING
Terminal pitch	0.65 mm
Terminal location	QUAD
width	14 mm

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KM736V847

KM718V947

Document Title

256Kx36 & 512Kx18 Flow-Through NtRAM

256Kx36 & 512Kx18-Bit Flow Through NtRAM

Revision History

Rev. No.

0.0

0.1

History

1. Initial document.

Modify from ADV to ADV at timing.

Add the Trade Mark( NtRAM

)

1. Changed t

from 8.0ns to 8.5ns at -8

2. Changed t

CYC

from 13.0ns to 12.0ns at -10

3. Changed DC condition at Icc and parameters

Icc ; from 240mA to 260mA at -10,

SB1

; from 10mA to 30mA,

SB2

; from 10mA to 30mA.

1. A

119BGA(7x17 Ball Grid Array Package) .

2. A

x32 organization

DDQ

Supply voltage( 2.5V )

Changed V

Max value from 0.2V to 0.4V at 2.5V I/O.

1. Final Spec Release.

2. Remove x32 organization.

1. Remove V

DDQ

Supply voltage( 2.5V I/O )

1. Add V

DDQ

Supply voltage( 2.5V I/O )

1. Add tCYC 117MHz.

2. Remove 119BGA package.

3. Change tCYC from 12ns to 10ns at -9.

4. Changed DC condition at Icc and parameters

Icc ; from 300mA to 280mA at -8,

Draft Date

April. 09. 1998

June. 02. 1998

Remark

Preliminary

0.2

Sep. 09. 1998

Preliminary

0.3

Oct. 15. 1998

Preliminary

0.4

0.5

1.0

Dec. 10. 1998

Dec. 23. 1998

Jan. 29. 1999

Preliminary

Final

2.0

3.0

4.0

Feb. 25. 1999

May. 13. 1999

Nov. 19. 1999

Final

The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the

specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques-

tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

-1-

November 1999

Rev 4.0

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