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2N3599

Description
Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size290KB,4 Pages
ManufacturerSemitronics Corp.
Download Datasheet Parametric View All

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Power Bipolar Transistor, 20A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-63, Metal, 3 Pin, TO-63, 3 PIN

2N3599 Parametric

Parameter NameAttribute value
Parts packaging codeTO-63
package instructionPOST/STUD MOUNT, O-MUPM-D3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-63
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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