Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN
| Parameter Name | Attribute value |
| Parts packaging code | TO-59 |
| package instruction | POST/STUD MOUNT, O-MUPM-X3 |
| Contacts | 3 |
| Reach Compliance Code | unknow |
| ECCN code | EAR99 |
| Maximum collector current (IC) | 5 A |
| Collector-emitter maximum voltage | 80 V |
| Configuration | Single |
| Minimum DC current gain (hFE) | 50 |
| JEDEC-95 code | TO-59 |
| JESD-30 code | O-MUPM-X3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 175 °C |
| Package body material | METAL |
| Package shape | ROUND |
| Package form | POST/STUD MOUNT |
| Polarity/channel type | NPN |
| Maximum power dissipation(Abs) | 30 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 20 MHz |
| Base Number Matches | 1 |
| 2N3850 | 2N3752 | 2N2880 | 2N3749 | 2N3999 | 2N5004 | |
|---|---|---|---|---|---|---|
| Description | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, TO-111, 4 PIN | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon | Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 Pin, TO-59, 3 PIN |
| Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum collector current (IC) | 5 A | 5 A | 5 A | 5 A | 5 A | 5 A |
| Collector-emitter maximum voltage | 80 V | 80 V | 80 V | 80 V | 80 V | 80 V |
| Configuration | Single | Single | Single | Single | Single | Single |
| Minimum DC current gain (hFE) | 50 | 100 | 40 | 40 | 60 | 70 |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
| Maximum power dissipation(Abs) | 30 W | 30 W | 30 W | 30 W | 2 W | 50 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO | NO |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 20 MHz | 50 MHz | 50 MHz | 40 MHz | 40 MHz | 70 MHz |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |
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