Transistors with built-in Resistor
UNR111x Series
(UN111x Series)
Silicon PNP epitaxial planar transistor
Unit: mm
For digital circuits
(0.4)
6.9
±0.1
(1.5)
(1.5)
3.5
±0.1
2.5
±0.1
(1.0)
(1.0)
2.0
±0.2
2.4
±0.2
1.0
±0.1
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
UNR111D
UNR111E
UNR111F
UNR111H
UNR111L
(UN1110)
(UN1111)
(UN1112)
(UN1113)
(UN1114)
(UN1115)
(UN1116)
(UN1117)
(UN1118)
(UN1119)
(UN111D)
(UN111E)
(UN111F)
(UN111H)
(UN111L)
(R
1
)
47 kΩ
10 kΩ
22 kΩ
47 kΩ
10 kΩ
10 kΩ
4.7 kΩ
22 kΩ
0.51 kΩ
1 kΩ
47 kΩ
47 kΩ
4.7 kΩ
2.2 kΩ
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
3
(2.5)
2
(2.5)
1
1.25
±0.05
■
Resistance by Part Number
(0.85)
0.55
±0.1
0.45
±0.05
1: Base
2: Collector
3: Emitter
M-A1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
400
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: October 2003
SJH00001BED
4.1
±0.2
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
R 0.9
R 0.7
4.5
±0.1
■
Features
1
UNR111x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR1111
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.5
−
0.2
−
0.1
−
0.01
−1.0
−1.5
−2.0
h
FE
V
CE
= −10
V, I
C
= −5
mA
35
60
80
160
20
30
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
f
T
R
1
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
−30%
80
10
22
47
4.7
0.51
1
2.2
R
1
/R
2
0.8
0.17
0.08
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
0.27
1.2
0.25
0.12
+30%
MHz
kΩ
−4.9
−
0.2
−
0.25
V
V
V
460
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR1112/1114/111D/111E
(Collector open) UNR1113
UNR1110/1115/1116/1117
UNR111F/111H
UNR1119
UNR1118/111L
Forward current UNR1111
transfer ratio
UNR1112/111E
UNR1113/1114
UNR1110
*
/1115
*
/1116
*
/
1117
*
UNR1118/111L
UNR1119/111D/111F/111H
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
UNR1113
UNR111D
UNR111E
Transition frequency
Input resistance UNR1111/1114/1115
UNR1112/1117
UNR1110/1113/111D/111E
UNR1116/111F/111L
UNR1118
UNR1119
UNR111H
Resistance ratio UNR1111/1112/1113/111L
UNR1114
UNR1118/1119
UNR111D
UNR111E
UNR111F
UNR111H
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification (UNR1110/1115/1116/1117)
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
SJH00001BED
2
UNR111x Series
Common characteristics chart
P
T
T
a
500
Total power dissipation P
T
(mW)
400
300
200
100
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
Characteristics charts of UNR1110
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00001BED
3
UNR111x Series
Characteristics charts of UNR1111
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
160
V
CE
= −10
V
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
25°C
120
−25°C
80
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−
0.1
−25°C
−40
−
0.2 mA
−
0.1 mA
40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
IN
I
O
V
O
= −5
V
T
a
=
25°C
−100
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1112
I
C
V
CE
I
B
= −1.0
mA
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−160
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
4
SJH00001BED
UNR111x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
=
−5
V
T
a
= 25°C
V
IN
I
O
−100
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
3
−10
2
Input voltage V
IN
(V)
−
0.6
−
0.8
−1.0
−1.2
−1.4
−10
3
−10
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR1113
I
C
V
CE
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
100
0
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−10
4
I
O
V
IN
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
3
−10
2
Input voltage V
IN
(V)
−
0.6
−
0.8
−1.0
−1.2
−1.4
−10
3
−10
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00001BED
5
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