Silicon Controlled Rectifier, 350 A, 1200 V, SCR, TO-200AB
| Parameter Name | Attribute value |
| Maker | IXYS |
| package instruction | DISK BUTTON, O-CEDB-N2 |
| Reach Compliance Code | unknown |
| Other features | HIGH RELIABILITY |
| Nominal circuit commutation break time | 35 µs |
| Configuration | SINGLE |
| Critical rise rate of minimum off-state voltage | 100 V/us |
| Maximum DC gate trigger current | 200 mA |
| Maximum DC gate trigger voltage | 3 V |
| Maximum holding current | 600 mA |
| JEDEC-95 code | TO-200AB |
| JESD-30 code | O-CEDB-N2 |
| Number of components | 1 |
| Number of terminals | 2 |
| Package body material | CERAMIC, METAL-SEALED COFIRED |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Certification status | Not Qualified |
| Maximum rms on-state current | 350 A |
| Maximum repetitive peak off-state leakage current | 20000 µA |
| Off-state repetitive peak voltage | 1200 V |
| Repeated peak reverse voltage | 1200 V |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | END |
| Trigger device type | SCR |
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