Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia.
Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use
http://www.nexperia.com
Instead of sales.addresses@www.nxp.com or sales.addresses@www.semiconductors.philips.com, use
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
-
© Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
or telephone (details via
salesaddresses@nexperia.com).
Thank you for your cooperation and
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D109
BCV29; BCV49
NPN Darlington transistors
Product data sheet
Supersedes data of 1999 Apr 08
2004 Dec 06
NXP Semiconductors
Product data sheet
NPN Darlington transistors
FEATURES
•
High current (max. 500 mA)
•
Low voltage (max. 60 V)
•
High DC current gain (min. 20 000).
APPLICATIONS
•
Preamplifier input applications.
PINNING
PIN
1
2
3
emitter
collector
base
BCV29; BCV49
DESCRIPTION
3
2
DESCRIPTION
NPN small-signal Darlington transistor in a surface mount
SOT89 plastic package. PNP complements: BCV28 and
BCV48.
MARKING
TYPE NUMBER
BCV29
BCV49
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
BCV29
BCV49
SC-62
DESCRIPTION
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
VERSION
SOT89
MARKING CODE
EF
EG
Fig.1
Simplified outline (SOT89) and symbol.
TR1
TR2
3
2
1
1
sym087
2004 Dec 06
2
NXP Semiconductors
Product data sheet
NPN Darlington transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
BCV29
BCV49
V
CES
collector-emitter voltage
BCV29
BCV49
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
open collector
V
BE
= 0 V
−
−
−
−
−
−
T
amb
≤
25
°C;
note 1
−
−65
−
−65
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
BCV29; BCV49
MIN.
MAX.
40
80
30
60
10
500
1
200
1.3
+150
150
+150
V
V
V
V
V
UNIT
mA
A
mA
W
°C
°C
°C
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
R
th(j-s)
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
PARAMETER
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
CONDITIONS
note 1
VALUE
96
16
UNIT
K/W
K/W
2004 Dec 06
3
NXP Semiconductors
Product data sheet
NPN Darlington transistors
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
BCV29
BCV49
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BCV29
PARAMETER
collector-base cut-off current
I
E
= 0 A; V
CB
= 30 V
I
E
= 0 A; V
CB
= 60 V
I
C
= 0 A; V
EB
= 10 V
V
CE
= 5 V; see Fig.2
I
C
= 1 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
DC current gain
BCV49
V
CE
= 5 V; see Fig.2
I
C
= 1 mA
I
C
= 10 mA
I
C
= 100 mA
I
C
= 500 mA
V
CEsat
V
BEsat
V
BEon
f
T
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 0.1 mA
base-emitter saturation voltage
base-emitter on-state voltage
transition frequency
I
C
= 100 mA; I
B
= 0.1 mA
I
C
= 10 mA; V
CE
= 5 V
−
−
−
CONDITIONS
BCV29; BCV49
MIN.
TYP.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
220
MAX. UNIT
100
100
100
−
−
−
−
−
−
−
−
1
1.5
1.4
−
V
V
V
MHz
nA
nA
nA
4 000
10 000
20 000
4 000
2 000
4 000
10 000
2 000
−
−
−
I
C
= 30 mA; V
CE
= 5 V; f = 100 MHz
−
2004 Dec 06
4
京公网安备 11010802033920号
EEWORLD
