UMZ8.2T
Diodes
Zener diode
UMZ8.2T
!
Applications
Constant voltage control
Noise suppression on signal line
!
External dimensions
(Units : mm)
2.0
±
0.2
1.3
±
0.1
0.65
0.65
0.3
0.9
±
0.1
0.6
0.3
±
0.1
0.15
±
0.05
(All leads have the same dimensions)
!
Construction
Silicon epitaxial planar
ROHM : UMD3
EIAJ : SC-70
JEDEC : SOT-323
!
Circuit
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Power dissipation
∗
Junction temperature
Storage temperature
∗
Total of 2 elements.
Symbol
P
Tj
Tstg
Limits
200
150
−55
~
+150
Unit
mW
°C
°C
!
Electrical characteristics
(Ta = 25°C)
Parameter
Zener voltage
Reverse current
Operating resistance
Rising operating resistance
Symbol
V
Z
I
R
Z
Z
Z
ZK
Min.
7.76
−
−
−
Typ.
−
−
−
−
Max.
8.64
0.50
30
60
Unit
V
µA
Ω
Ω
I
Z
=5mA
V
R
=5V
I
Z
=5mA
I
Z
=0.5mA
Conditions
0.1Min.
6R
!
Features
1) Small surface mounting type. (UMD3)
2) Multiple diodes with common cathode configuration.
3) High reliability.
1.25
±
0.1
2.1
±
0.1
0~0.1
UMZ8.2T
Diodes
!
Electrical characteristic curves
(Ta = 25°C)
100m
DYNAMIC IMPEADANCE : Z
Z
(Ω)
100
300
POWER DISSIPATION : Pd (mW)
1
ZENER CURRENT : I
Z
(mA)
10
ZENER CURRENT : I
Z
(mA)
10m
1m
100µ
10µ
1µ
100n
0
200
Ta=25
°C
10
100
2
4
6
8
10
12
14
1
0.1
0
0
25
50
100
150
ZENER VOLTAGE : V
Z
(V)
AMBIENT TEMPERATURE : Ta (
°C
)
Fig. 1 Zener voltage characteristics
Fig. 2 Operating resistance
Zener current characteristics
Fig. 3 Derating curve
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