50S0090 datasheet, PDF - EEWORLD Datasheet

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50S0090: Description5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-251; Categorysemiconductor Discrete semiconductor; File Size55KB，1 Pages; ManufacturerNew Jersey Semiconductor; Websitehttp://www.njsemi.com

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5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-251

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Lpi.oa.ucti., One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

TELEPHONE: (201) 376-2922

(212)227-6005

FAX: (201) 376-8960

Schottky Rectifiers

Part

Number

11 0003

11 0004

110005

110Q06

110Q09

110Q10

21D003

210004

21D005

21DQ06

210009

210010

31 0003

310004

310005

31 0006

310009

310010

30WQ03

30WQ04

30WQ05

30W006

30WQ09

30WQ10

50WQ03

50WQ04

50WQ05

50WQ06

50WQ09

50WQ10

50SQ060

50SQ080

50S0090

50S0100

80S0030

80SQ035

80SQ040

80S0045

90SQ030

90SQ035

90SQ040

90SQ045

8T0060

8TQ080

8TQ090

8TQ100

10T0030

10TQ035

10TQ040

10TQ045

18TQ030

18T0035

18TQ040

18TQ045

18TQ050

lF(AV) @ TC

VRRM

VFM ® 'FM

3 It/im

n«»j

IFSM d)

50 Hz

(A)

40

25

40

' 40

80

45

70

95

60

85

60 Hz

(A)

42

26

42

85

48

73

100

63

90

(V)

30

40

50

60

90

100

30

40

50

60

90

100

30

40

50

60

90

100

30

40

50

60

90

100

30

40

50

60

90

100

60

80

90

100

30

35

40

45

30

35

40

45

60

80

90

100

30

35

40

45

30

35

40

45

50

(A)

1.1

1.7

3.3

3,3

3.3

5.5

5,5

55

5.5

rc)

58

40

25

20

35

20

109

108

107

97

95

Tj » 100«C

(V)

0.52

Tj » 125*C «

MM. Tj

-Notei

Rated V

RWM

(°C)

(mA)

6

11

6

13

16

2

25

30

5

12.0

15.0

IRM®

' Case Style

DO-204AL

DO-41

.

.s^

125

(4)

056

0.56

0.74

0.49

0.53

0.70

0.53

0.55

0.74

125

C-23

^

125

C-16

^

060

0.65

0.80

40

42

125

(3)

TO-251

2.0

063

0.63(

0.70

45

47

20.0

20,0

30.0

125

.0.82

0.82

0.58

300

3.0

^

#

5

92

215

225

7

150

(7)

00-204AR

8

92

0.55

380

400

13

175

9

92

0.41

480

500

100

150

/

(2)

8

125

0,69

242

255

7

150

TO-220AC

10

110

0.58

260

275

15

150

! .

18

121

0.53

380

400

40

150

(1) Peak half-cycle sinewave, following any rated lo? •ondition. VRWM reapplied.

(2) For lead formed options see page 149.

(3) For tape and reel options see page 136.

(4) for Ip(AV). TC is ambient temperature.

(7) For IF(AV). TC is lead temperature.

50S0090 Related Products

	50S0090	50WQ10	8TQ100
Description	5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-251	5.5 A, 100 V, SILICON, RECTIFIER DIODE, TO-251	8 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
Reach Compliance Code	-	unknow	unknow
application	-	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	-	SINGLE	SINGLE
Diode component materials	-	SILICON	SILICON
Diode type	-	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	-	0.82 V	0.69 V
JEDEC-95 code	-	TO-251	TO-220AC
JESD-30 code	-	R-PSIP-T3	R-PSFM-T2
Maximum non-repetitive peak forward current	-	47 A	255 A
Number of components	-	1	1
Phase	-	1	1
Number of terminals	-	3	2
Maximum operating temperature	-	125 °C	150 °C
Maximum output current	-	5.5 A	8 A
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	FLANGE MOUNT
Maximum repetitive peak reverse voltage	-	100 V	100 V
Maximum reverse current	-	3000 µA	7000 µA
surface mount	-	NO	NO
technology	-	SCHOTTKY	SCHOTTKY
Terminal form	-	THROUGH-HOLE	THROUGH-HOLE
Terminal location	-	SINGLE	SINGLE
Base Number Matches	-	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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