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JANTXV2N2812

Description
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin
CategoryDiscrete semiconductor    The transistor   
File Size143KB,3 Pages
ManufacturerAPI Technologies
Websitehttp://www.apitech.com/about-api
Download Datasheet Parametric View All

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JANTXV2N2812 Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin

JANTXV2N2812 Parametric

Parameter NameAttribute value
package instructionPOST/STUD MOUNT, O-MUPM-D3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-61
JESD-30 codeO-MUPM-D3
Number of components1
Number of terminals3
Maximum operating temperature175 °C
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)70 W
Certification statusNot Qualified
GuidelineMIL
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Transistor component materialsSILICON
Nominal transition frequency (fT)30 MHz
VCEsat-Max0.5 V
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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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