UMX21N
Transistors
High transition frequency (dual transistors)
UMX21N
Features
1) Two 2SC4713K chips in a UMT package.
2) Very low output-on resistance. (Ron)
3) Low capacitance.
External dimensions
(Unit : mm)
0.65
1.3
0.65
0.7
0.9
UMX21N
(4)
(3)
0.2
(6)
1.25
Equivalent circuits
UMX21N
(3)
(2)
(1)
2.1
0.15
0~0.1
0.1Min.
Tr
2
Tr
1
(4)
(5)
(6)
ROHM : UMT6
EIAJ : SC-88
Absolute maximum ratings
(Ta=25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
∗
120mW per element must not be exceeded.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
12
6
3
50
150
150
−55
to
+150
Unit
V
V
V
mA
mW
°C
°C
∗
Package, marking, and packaging specifications
Type
Package
Marking
Code
UMX21N
UMT6
X21
TR
3000
Basic ordering unit (pieces)
Electrical characteristics
(Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Output-on resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Ron
Min.
12
6
3
−
−
−
270
300
−
−
Typ.
−
−
−
−
−
−
−
800
1
2
Max.
−
−
−
0.5
0.5
0.3
560
−
1.7
−
Unit
V
V
V
µA
µA
V
−
MHz
pF
Ω
I
C
=10µA
I
C
=1mA
I
E
=10µA
V
CB
=10V
V
EB
=2V
I
C
/I
B
=10mA/1mA
V
CE
/I
C
=5V/10mA
V
CE
=5V,
I
E
= −10mA,
f=200MHz
V
CB
=10V,
I
E
=0A,
f=1MHz
I
B
=3mA,
V
I
=100mVrms,
f=500kHz
Conditions
(1)
Each lead has same dimensions
2.0
(5)
(2)
1/2
UMX21N
Transistors
Electrical characteristics curves
10
COLLECTOR CURRENT : I
C
(mA)
125
°C
8
25mA
40
1.0
mA
30mA
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
0.2mA
40
6
20mA
15mA
30
0.1mA
30
4
10mA
20
20
2
5mA
10
I
B
=
0mA
0.4
0.5
10
0
0
1
2
3
I
B
=
0
µ
A
4
5
0
0
0.1
0.2
0.3
0
0
0.4
0.8
−2
5
°C
25
°C
Ta
=
25°C
35mA
50
Ta
=
25°C
mA
A
0.5 0.4m
0.3mA
50
V
CE
=
5V
1.2
1.6
2.0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1
Grounded emitter output
Fig.2
Grounded emitter output
Fig.3
Grounded emitter propagation
characteristics ( )
COLLECTER SATURATION VOLTAGE : V
CE(sat)
(mA)
characteristics (
)
characteristics
DC CURRENT TRANSFER RATIO : h
FE
500
Ta=25°C
V
CE
=5V
GAIN BANDWIDTH PRODUCT : f
T
(MHz)
1000
1000
500
2000
Ta=25°C
I
C
/I
B
=10
1000
500
Ta=25°C
V
CE
=5V
200
100
50
200
100
50
20
10
200
100
50
20
10
0.1 0.2
5
0.1 0.2
0.5
1
2
5
10 20
50
0.5
1
2
5
10 20
50
20
0.1 0.2
0.5
1
2
5
10 20
50
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.4
DC current gain vs. collector current
Fig.5
Collector-emitter saturation
Fig.6
Gain bandwidth product vs.
voltage vs. collector current
collector current
20
20
OUTPUT CAPACITANCE : C
ob
(pF)
FEEDBACK CAPACITIANCE : C
re
(pF)
10
5
Ta=25°C
f=1MHz
10
5
Ta=25°C
f=1MHz
50
Ta=25°C
f=500kHz
υi=100mVrms
R
L
=1kΩ
ON RESISTANE : R
on
(Ω)
0.5
1
2
5
10 20
50
20
10
5
2
1
0.5
2
1
0.5
2
0.2
0.1 0.2
0.5
1
2
5
10 20
50
0.2
0.1 0.2
1
0.1 0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
BASS CURRENT : I
B
(mA)
Fig.7
Collector output capacitance
Fig.8 Back capacitance voltage
Fig.9
Output-on resistance vs.
vs. voltage
base current
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1
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