UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
NPN Medium Power Transistor (Switching)
UMT2222A / SST2222A / MMST2222A / PN2222A
!Features
1) BV
CEO
>
40V (I
C
=10mA)
2) Complements the UMT2907A / SST2907A
/ MMST2907A / PN2907A.
!External
dimensions
(Units : mm)
UMT2222A
2.0±0.2
1.3±0.1
0.65 0.65
(1)
(2)
0.2
0.9±0.1
0.7±0.1
1.25
±
0.1
2.1
±
0.1
0
∼
0.1
(3)
ROHM : UMT3
EIAJ : SC-70
0.3
+
0.1
0.15±0.05
−0
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
(1) Emitter
(2) Base
(3) Collector
!Package,
marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT2222A
UMT3
R1P
T106
3000
SST2222A MMST2222A
SST3
R1P
T116
3000
SMT3
R1P
T146
3000
PN2222A
TO-92
−
T93
3000
SST2222A
0.95
+
0.2
−0.1
0.45±0.1
2.4
±
0.2
1.3
+
0.2
−
0.1
0
∼
0.1
0.2Min.
0.1
∼
0.4
(3)
0.4
+
0.1
−0.05
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1)
(2)
1.1
+
0.2
−0.1
0.8±0.1
ROHM : SST3
+
0.1
0.15
−0.06
(1) Emitter
(2) Base
(3) Collector
MMST2222A
!Absolute
maximum ratings
(Ta = 25°C)
(3)
1.6
+
0.2
−
0.1
2.8
±
0.2
0
∼
0.1
Junction temperature
Storage temperature
∗
When mounted on a 7 x 5 x 0.6 mm ceramic board
Tj
Tstg
0.35
0.625
150
−55 ∼ +150
W
W
°C
°C
(12.7Min.)
UMT2222A,SST2222A,
MMST2222A
Collector power
SST2222A
dissipation
PN2222A
4.8
±
0.2
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V
CBO
V
CEO
V
EBO
I
C
75
40
6
0.6
0.2
V
V
V
A
W
0.4
+
0.1
−0.05
All terminals have same dimensions
+
0.1
0.15
−0.06
PN2222A
4.8
±
0.2
3.7
±
0.2
P
C
∗
2.5Min.
0.5
±
0.1
(1)
(2) (3)
5
+0.3
2.5
−
0.1
0.3
∼
0.6
Parameter
Symbol
Limits
Unit
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
+0.15
0.45
−
0.05
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical
characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
Min.
75
40
6
−
−
−
−
0.6
−
35
DC current transfer ratio
h
FE
50
75
50
100
Transition frequency
Output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
f
T
Cob
Cib
td
tr
tstg
tf
40
300
−
−
−
−
−
−
Typ.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max.
−
−
−
100
100
0.3
1
1.2
2
−
−
−
−
300
−
−
8
25
10
25
225
60
MHz
pF
pF
ns
ns
ns
ns
−
Unit
V
V
V
nA
nA
V
V
I
C
=10µA
I
C
=10mA
I
E
=10µA
V
CB
=
60V
V
EB
=
3V
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
V
CE
=10V
, I
C
=0.1mA
V
CE
=10V
, I
C
=1mA
V
CE
=10V
, I
C
=10mA
V
CE
=1V
, I
C
=150mA
V
CE
=10V
, I
C
=150mA
V
CE
=10V
, I
C
=500mA
V
CE
=20V
, I
C
=−20mA,
f
=100MHz
V
CB
=10V
, f
=100kHz
V
EB
=0.5V
, f
=100kHz
V
CC
=30V
, V
BE(OFF)
=0.5V
, I
C
=150mA
, I
B1
=15mA
V
CC
=30V
, V
BE(OFF)
=0.5V
, I
C
=150mA
, I
B1
=15mA
V
CC
=30V
, I
C
=150mA
, I
B1
=−I
B2
=15mA
V
CC
=30V
, I
C
=150mA
, I
B1
=−I
B2
=15mA
Conditions
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
!Electrical
characteristic curves
100
Ta=25°C
COLLECTOR CURRENT : Ic(mA)
600
500
400
1000
Ta=25°C
DC CURRENT GAIN : h
FE
V
CE
=
10V
50
300
200
100
100
1V
I
B
=0µA
0
0
10
5
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
10
0.1
1.0
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.1 Grounded emitter output
characteristics
Fig.3 DC current gain vs. collector current(Ι)
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
Ta=25°C
I
C
/ I
B
=10
0.3
1000
V
CE
=
10V
DC CURRENT GAIN : h
FE
Ta
=125°C
0.2
25
°C
−55°C
100
0.1
0
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
0.1
1.0
10
COLLECTOR CURRENT : Ic(mA)
100
1000
Fig.2 Collector-emitter saturation
voltage vs. collector current
Fig.4 DC current gain vs. collector current(ΙΙ)
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
1000
1.8
1.6
Ta
=25°C
V
CE
=
10V
f
=
1kHz
Ta
=25°C
I
C
/ I
B
=
10
AC CURRENT GAIN : h
FE
1.2
100
0.8
0.4
10
0.1
0
1.0
1.0
10
COLLECTOR CURRENT : Ic(mA)
100
1000
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.5 AC current gain vs. collector current
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT2222A / SST2222A / MMST2222A / PN2222A
Transistors
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
1.8
1.6
Ta
=25°C
V
CE
=
10V
1000
Ta
=25°C
I
C
/ I
B
=
10
500
Ta
=25°C
V
CC
=
30V
I
C
/ I
B
=
10
TURN ON TIME : ton(ns)
1.2
100
V
CC
=
30V
10V
0.8
0.4
RISE TIME : tr(ns)
100
10
0
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
5
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.7 Grounded emitter propagation
characteristics
Fig.8 Turn-on time vs. collector
current
Fig.9 Rise time vs. collector
current
1000
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
1000
Ta
=25°C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
100
Ta
=25°C
f
=
1MHz
STORAGE TIME : Ts(ns)
CAPACITANCE(pF)
FALL TIME : tf(ns)
Cib
100
100
10
Cob
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
1
0.1
1.0
10
REVERSE BIAS VOLTAGE(V)
100
Fig.10 Storage time vs. collector
current
Fig.11 Fall time vs. collector
current
Fig.12 Input / output capacitance
vs. voltage
100
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
100MHz 250MHz 300MHz
200MHz
10
1
250MHz
0.1
CURRENT GAIN-BANDWIDTH PRODUCT(MHz)
Ta
=25°C
1000
Ta
=25°C
V
CE
=
10V
100
1
10
100
1000
COLLECTOR CURRENT : Ic(mA)
10
1.0
10
100
1000
COLLECTOR CURRENT : Ic(mA)
Fig.13 Gain bandwidth product
Fig.14 Gain bandwidth product
vs. collector current