2N7330D datasheet, PDF - EEWORLD Datasheet

2N7330D: Description26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE; CategoryDiscrete semiconductor The transistor; File Size99KB，4 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N7330D Overview

26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	26 A
Maximum drain-source on-resistance	0.2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AE
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	P-CHANNEL
Maximum power consumption environment	300 W
Maximum pulsed drain current (IDM)	78 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Maximum off time (toff)	1200 ns
Maximum opening time (tons)	950 ns
Base Number Matches	1

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