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2N7330D

Description
26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE
CategoryDiscrete semiconductor    The transistor   
File Size99KB,4 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet Parametric View All

2N7330D Overview

26A, 200V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AE

2N7330D Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresRADIATION HARDENED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (ID)26 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-204AE
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Maximum power consumption environment300 W
Maximum pulsed drain current (IDM)78 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Maximum off time (toff)1200 ns
Maximum opening time (tons)950 ns
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