PESD5V0V2BMB
17 August 2015
SO
T8
83
B
Very low capacitance bidirectional ESD protection diodes
Product data sheet
1. General description
Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect
two signal lines from damage caused by ESD and other transients. The device is housed
in a DFN1006B-3 (SOT883B) leadless ultra small Surface-Mounted Device (SMD) plastic
package.
2. Features and benefits
•
•
•
•
•
•
Bidirectional ESD protection of two lines
Ultra small SMD plastic package
ESD protection up to 30 kV; IEC 61000-4-2
I
PPM
= 9 A; IEC 61000-4-5 (surge)
Ultra low leakage current: I
RM
= 1 nA
AEC-Q101 qualified
3. Applications
•
•
•
•
•
Computers and peripherals
Audio and video equipment
Cellular handsets and accessories
Communication systems
Portable electronics
4. Quick reference data
Table 1.
Symbol
V
RWM
C
d
Quick reference data
Parameter
reverse standoff
voltage
diode capacitance
Conditions
T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
Min
-
-
Typ
-
18
Max
5
20
Unit
V
pF
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NXP Semiconductors
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
5. Pinning information
Table 2.
Pin
1
2
3
Pinning information
Symbol Description
K1
K2
K3
cathode
cathode
common cathode
Simplified outline
1
3
2
Transparent
top view
Graphic symbol
1
2
006aab331
3
DFN1006B-3 (SOT883B)
6. Ordering information
Table 3.
Ordering information
Package
Name
PESD5V0V2BMB
DFN1006B-3
Description
DFN1006B-3: leadless ultra small plastic package; 3
solder lands; body 1.0 x 0.6 x 0.37 mm
Version
SOT883B
Type number
7. Marking
Table 4.
Marking codes
Marking code
00 11 01 00
PIN 1 INDICATION
READING DIRECTION
Type number
PESD5V0V2BMB
READING EXAMPLE:
0111
1011
MARKING CODE
(EXAMPLE)
READING DIRECTION
006aac673
Fig. 1.
DFN1006B-3 (SOT883B) binary marking code description
PESD5V0V2BMB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
17 August 2015
2 / 12
NXP Semiconductors
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I
PPM
T
j
T
amb
T
stg
V
ESD
Parameter
rated peak pulse current
junction temperature
ambient temperature
storage temperature
Conditions
t
p
= 8/20 μs
[1][2]
Min
-
-
-55
-65
Max
9
150
150
150
Unit
A
°C
°C
°C
ESD maximum ratings
electrostatic discharge voltage
IEC 61000-4-2; contact discharge
IEC 61000-4-2; air discharge
MIL-STD-883; human body model
[1]
[2]
[3]
120
I
PP
(%)
80
100 % I
PP
; 8 µs
[1][3]
[1][3]
[1]
-
-
-
30
30
10
kV
kV
kV
Measured from pin 1 or 2 to pin 3.
According to IEC 61000-4-5 and IEC 61643-321.
Device stressed with ten non-repetitive ESD pulses.
001aaa630
001aaa631
I
PP
100 %
90 %
e
- t
50 % I
PP
; 20 µs
40
10 %
0
0
10
20
30
t (µs)
40
t
r
= 0.6 ns to 1 ns
30 ns
60 ns
t
Fig. 2.
8/20 µs pulse waveform according to
IEC 61000-4-5 and IEC 61643-321
Fig. 3.
ESD pulse waveform according to
IEC 61000-4-2
9. Characteristics
Table 6.
Symbol
V
RWM
I
RM
PESD5V0V2BMB
Characteristics
Parameter
reverse standoff
voltage
reverse leakage
current
Conditions
T
amb
= 25 °C
V
RWM
= 5 V; T
amb
= 25 °C
All information provided in this document is subject to legal disclaimers.
Min
-
[1]
Typ
-
1
Max
5
10
Unit
V
nA
-
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
17 August 2015
3 / 12
NXP Semiconductors
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
Symbol
V
BR
C
d
V
CL
Parameter
breakdown voltage
diode capacitance
clamping voltage
Conditions
I
R
= 5 mA; T
amb
= 25 °C
f = 1 MHz; V
R
= 0 V; T
amb
= 25 °C
I
PP
= 1 A; T
amb
= 25 °C; t
p
= 8/20 μs
I
PPM
= 9 A; T
amb
= 25 °C; t
p
= 8/20 μs
[1][2]
[1][2]
[1][3]
[1]
Min
5.5
-
-
-
-
Typ
6.8
18
8
11
0.15
Max
7.8
20
9.5
12.5
-
Unit
V
pF
V
V
Ω
R
dyn
dynamic resistance
[1]
[2]
[3]
I
R
= 10 A; T
amb
= 25 °C
Measured from pin 1 or 2 to pin 3.
According to IEC 61000-4-5 and IEC 61643-321.
Non-repetitive current pulse, Transmission Line Pulse (TLP) t
p
= 100 ns; square pulse; ANSI / ESD
STM5.5.1-2008.
aaa-019002
20
C
d
(pF)
16
I
PP
12
- V
CL
- V
BR
- V
RWM
I
R
I
RM
8
- I
RM
- I
R
V
RWM
V
BR
V
CL
4
-
+
0
-5
-3
-1
1
3
V
R
(V)
5
- I
PP
006aaa676
f = 1 MHz; T
amb
= 25 °C
Fig. 4.
Diode capacitance as a function of reverse
voltage; typical values
30
I
(A)
20
aaa-019004
Fig. 5.
V-I characteristics for a bidirectional ESD
protection diode
0
I
(A)
-10
aaa-019006
10
R
dyn
: 0.15 Ω
-20
R
dyn
: 0.15 Ω
0
0
4
8
V
CL
(V)
12
-30
-12
-8
-4
V
CL
(V)
0
t
p
= 100 ns; Transmission Line Pulse (TLP)
Fig. 6.
Dynamic resistance
Fig. 7.
t
p
= 100 ns; Transmission Line Pulse (TLP)
Dynamic resistance
© NXP Semiconductors N.V. 2015. All rights reserved
PESD5V0V2BMB
All information provided in this document is subject to legal disclaimers.
Product data sheet
17 August 2015
4 / 12
NXP Semiconductors
PESD5V0V2BMB
Very low capacitance bidirectional ESD protection diodes
ESD TESTER
Rd
Cs
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
40 dB
ATTENUATOR
50 Ω
IEC 61000-4-2 ed.2
C
s
= 150 pF; R
d
= 330 Ω
DUT
(DEVICE
UNDER
TEST)
10
V
(kV) 8
6
4
2
V
(kV) 0
-2
-4
2
-6
0
-2
-10
-8
-10
-10
0
10
20
30
40
50
t (ns)
60
70
0
10
20
30
40
50
t (ns)
60
70
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped -8 kV ESD pulse waveform
(IEC 61000-4-2 network)
aaa-003952
Fig. 8.
V
CL
(V)
ESD clamping test setup and waveforms
70
aaa-019009
40
V
CL
(V)
20
aaa-019010
50
30
V
CL
at 30 ns = 8.5 V
0
V
CL
at 30 ns = - 8.5 V
10
-20
-10
-40
-30
-10
10
30
50
t (ns)
70
-60
-10
10
30
50
t (ns)
70
Fig. 9.
Clamped +8 kV pulse waveform (IEC 61000-4-2
network)
Fig. 10. Clamped -8 kV pulse waveform (IEC 61000-4-2
network)
PESD5V0V2BMB
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved
Product data sheet
17 August 2015
5 / 12
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