Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
Transistors
EMH3 / UMH3N / IMH3A
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
Features
1) Two DTAK13Ts chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
External dimensions
(Units : mm)
EMH3
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
Structure
Epitaxial planar type
NPN silicon transistor
Abbreviated symbol : H3
ROHM : EMT6
UMH3N
(4)
0.65
1.3
0.65
0.7
0.8
1.1
(3)
0.5
0.5 0.5
1.0
1.6
0.95 0.95
1.9
2.9
0.2
(6)
1.25
2.1
Equivalent circuit
EMH3 / UMH3N
(3) (2)
R
1
(1)
0.15
(1)
The following characteristics apply to both DTr
1
and DTr
2
.
0.1Min.
IMH3A
(4) (5)
R
1
(6)
0to0.1
Each lead has same dimensions
DTr
1
DTr
2
R
1
(5)
DTr
2
R
1
(2)
DTr
1
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : H3
IMH3A
(1)
(6)
(4)
(6)
(3)
(4)
(5)
1.6
2.8
Packaging specifications
Package
Code
Type
EMH3
UMH3N
IMH3A
−
−
−
Basic ordering
unit (pieces)
T2R
8000
Taping
TN
3000
−
T110
3000
−
−
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : H3
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(3)
(2)
R
1
=4.7kΩ
R
1
=4.7kΩ
0.3
(1)
0.9
2.0
(5)
(2)
Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747
Transistors
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
EMH3,UMH3N
IMH3A
Tj
Tstg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Pc
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
−55~+150
°C
°C
Unit
V
V
V
mA
mW
EMH3 / UMH3N / IMH3A
∗
1
∗
2
Junction temperature
Storage temperature
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
R
1
Min.
50
50
5
−
−
−
100
−
3.29
Typ.
−
−
−
−
−
−
250
250
4.7
Max.
−
−
−
0.5
0.5
0.3
600
−
6.11
Unit
V
V
V
µA
µA
V
−
MHz
kΩ
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
Conditions
I
C
/I
B
=5mA/0.25mA
V
CE
=5V, I
C
=1mA
V
CE
=10mA, I
E
=−5mA, f=100MHz
−
∗
∗
Transition frequency of the device
Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
1k
500
V
CE
=5V
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
l
C
/l
B
=20
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
Ta=100°C
25°C
−40°C
Ta=100°C
25°C
−40°C
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2 Collector-emitter saturation
voltage vs. collector current
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