EMD6 / UMD6N / IMD6A
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
!
Features
1) Both the DTA143T chip and DTC143T chip in an EMT
or UMT or SMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
!
External dimensions
(Units : mm)
EMD6
0.22
(4)
(5)
(6)
(3)
(2)
1.2
1.6
(1)
0.13
Each lead has same dimensions
ROHM : EMT6
Abbreviated symbol : D6
!
Structure
A PNP and NPN digital transistor
(each with a single built in resistor)
(4)
0.65
1.3
0.65
0.8
1.1
0.95 0.95
1.9
2.9
0.7
0.9
(3)
EMD6N
0.2
0.5
0.5 0.5
1.0
1.6
2.0
(6)
(5)
1.25
2.1
The following characteristics apply to both the DTr
1
and
DTr
2
, however, the “
−”
sign on DTr
2
values for the PNP
type have been omitted.
0.15
0.1Min.
0to0.1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D6
!
Equivalent circuit
EMD6 / UMD6N
(3) (2)
R
1
(1)
IMD6A
IMD6A
(5)
(2)
(4) (5)
R
1
0.3
(6)
(6)
(4)
DTr
1
DTr
2
R
1
=4.7kΩ
(4)
R
1
(5)
DTr
2
R
1
(2)
DTr
1
1.6
0.15
(6)
(3)
R
1
=4.7kΩ
(1)
2.8
0.3to0.6
0to0.1
Each lead has same dimensions
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector EMD6, UMD6N
power
dissipation IMD6A
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
50
50
5
100
150 (TOTAL)
300 (TOTAL)
150
−55∼+150
˚C
˚C
Unit
V
V
V
mA
mW
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : D6
∗
1
∗
2
∗
1 120mW per element must not be exceeded.
∗
2 200mW per element must not be exceeded.
(3)
(1)
(1)
(2)
EMD6 / UMD6N / IMD6A
Transistors
!
Electrical characteristics
(Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Symbol Min. Typ. Max. Unit
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE (sat)
h
FE
f
T
R
1
50
50
5
−
−
−
100
−
3.29
−
−
−
−
−
−
250
250
4.7
−
−
−
0.5
0.5
0.3
600
−
6.11
V
V
V
µA
µA
V
−
I
C
=50µA
I
C
=1mA
I
E
=50µA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=5mA/0.25mA
V
CE
=5V,
I
C
=1mA
Conditions
MHz V
CE
=10mA,
I
E
=
−5mA,
f=100MHz
kΩ
−
∗
∗
Transition frequency of the transistor
!
Packaging specifications
Package
Code
Type
EMD6
UMD6N
IMD6A
Basic ordering
unit (pieces)
T2R
8000
Taping
TR
3000
T148
3000
!
Electrical characteristic curves
DTr
1
(NPN)
V
CE
=5V
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
1k
500
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100
µ
200
µ
500
µ
1m
2m
5m
l
C
/l
B
=20
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
100µ 200µ 500µ 1m
2m
5m 10m 20m
50m100m
Ta=100˚C
25˚C
−40˚C
Ta=100˚C
25˚C
−40˚C
10m 20m
50m 100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.1 DC current gain vs. collector
current
Fig.2
Collector-emitter saturation
voltage vs. collector current
DTr
2
(PNP)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(
V)
1k
500
V
CE
=−5V
−1
l
C
/l
B
=20
Ta=100˚C
25˚C
−40˚C
−500m
−200m
DC CURRENT GAIN : h
FE
200
100
50
20
10
5
2
1
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
Ta=100˚C
25˚C
−40˚C
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ −200µ −500µ −1m −2m
−5m −10m −20m −50m−100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC current gain vs. collector
current
Fig.4 Collector-emitter saturation
voltage vs. collector current
MCU
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