UMC2NT1, UMC3NT1,
UMC5NT1
Preferred Devices
Dual Common
Base−Collector Bias
Resistor Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the UMC2NT1 series, two
complementary BRT devices are housed in the SOT−353 package
which is ideal for low power surface mount applications where board
space is at a premium.
Features
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3
R1
2
R2
1
R2
Q1
R1
4
Q2
5
•
•
•
•
•
Pb−Free Packages are Available
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MARKING
DIAGRAM
5
SC−88A/SOT−353
CASE 419A
STYLE 6
1
4
Ux d
2
3
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted, common for Q
1
and Q
2
, − minus sign for Q
1
(PNP) omitted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V
CBO
V
CEO
I
C
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Ux = Device Marking
x = 2, 3 or 5
d = Date Code
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
THERMAL CHARACTERISTICS
Thermal Resistance − Junction-to-Ambient
(surface mounted)
Operating and Storage Temperature Range
Total Package Dissipation
@ T
A
= 25°C (Note 1)
R
θJA
T
J
, T
stg
P
D
833
−65 to
+150
*150
°C/W
°C
mW
Preferred
devices are recommended choices for future use
and best overall value.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the
minimum recommended footprint.
©
Semiconductor Components Industries, LLC, 2004
1
September, 2004 − Rev. 5
Publication Order Number:
UMC2NT1/D
UMC2NT1, UMC3NT1, UMC5NT1
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Q1 TRANSISTOR: PNP
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 0 mA)
UMC2NT1
UMC3NT1
UMC5NT1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
100
500
0.2
0.5
1.0
nAdc
nAdc
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
UMC2NT1
UMC3NT1
UMC5NT1
V
(BR)CBO
V
(BR)CEO
h
FE
50
50
60
35
20
−
−
4.9
15.4
7.0
3.3
0.8
0.8
0.38
−
−
100
60
35
−
−
−
22
10
4.7
1.0
1.0
0.47
−
−
−
−
−
0.25
0.2
−
28.6
13
6.1
1.2
1.2
0.56
Vdc
Vdc
Vdc
kW
Vdc
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
UMC2NT1
UMC3NT1
UMC5NT1
UMC2NT1
UMC3NT1
UMC5NT1
V
CE(SAT)
V
OL
V
OH
R1
Resistor Ratio
R1/R2
Q2 TRANSISTOR: NPN
OFF CHARACTERISTICS
Collector-Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current (V
CB
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0, I
C
= 0 mA)
UMC2NT1
UMC3NT1
UMC5NT1
I
CBO
I
CEO
I
EBO
−
−
−
−
−
−
−
−
−
−
100
500
0.2
0.5
0.1
nAdc
nAdc
mAdc
ON CHARACTERISTICS
Collector-Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (I
C
= 2.0 mA, I
B
= 0)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
UMC2NT1
UMC3NT1
UMC5NT1
V
(BR)CBO
V
(BR)CEO
h
FE
50
50
60
35
80
−
−
4.9
15.4
7.0
33
0.8
0.8
0.8
−
−
100
60
140
−
−
−
22
10
47
1.0
1.0
1.0
−
−
−
−
−
0.25
0.2
−
28.6
13
61
1.2
1.2
1.2
Vdc
Vdc
Vdc
kW
Vdc
Vdc
Collector−Emitter Saturation Voltage (I
C
= 10 mA, I
B
= 0.3 mA)
Output Voltage (on) (V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
Input Resistor
UMC2NT1
UMC3NT1
UMC5NT1
UMC2NT1
UMC3NT1
UMC5NT1
V
CE(SAT)
V
OL
V
OH
R1
Resistor Ratio
R1/R2
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UMC2NT1, UMC3NT1, UMC5NT1
ORDERING INFORMATION
Device
UMC2NT1
UMC2NT1G
UMC3NT1
UMC3NT1G
UMC3NT2
UMC5NT1
UMC5NT2
UMC5NT2G
Package
SC−88A/SOT−353
SC−88A/SOT−353
(Pb−Free)
SC−88A/SOT−353
SC−88A/SOT−353
(Pb−Free)
SC−88A/SOT−353
SC−88A/SOT−353
SC−88A/SOT−353
SC−88A/SOT−353
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DEVICE MARKING AND RESISTOR VALUES
Transistor 1 − PNP
Device
UMC2NT1
UMC3NT1
UMC3NT2
UMC5NT1
UMC5NT2
Marking
U2
U3
U3
U5
U5
R1 (K)
22
10
10
4.7
4.7
R2 (K)
22
10
10
10
10
Transistor 2 − NPN
R1 (K)
22
10
10
47
47
R2 (K)
22
10
10
47
47
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
−50
R
θJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
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UMC2NT1, UMC3NT1, UMC5NT1
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1 PNP TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
10
I
C
/I
B
= 10
hFE, DC CURRENT GAIN
1000
V
CE
= 10 V
1
T
A
= −25°C
25°C
T
A
= 75°C
100
25°C
−25°C
75°C
0.1
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
IC, COLLECTOR CURRENT (mA)
f = 1 MHz
l
E
= 0 mA
T
A
= 25°C
100
75°C
10
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
1
2
0.1
1
0.01
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
V
O
= 5 V
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V in , INPUT VOLTAGE (VOLTS)
V
O
= 0.2 V
T
A
= −25°C
10
75°C
25°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
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UMC2NT1, UMC3NT1, UMC5NT1
TYPICAL ELECTRICAL CHARACTERISTICS — UMC2NT1 NPN TRANSISTOR
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
I
C
/I
B
= 10
T
A
= −25°C
hFE, DC CURRENT GAIN
25°C
0.1
75°C
1000
V
CE
= 10 V
T
A
= 75°C
25°C
−25°C
100
0.01
0.001
0
20
40
I
C
, COLLECTOR CURRENT (mA)
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 7. V
CE(sat)
versus I
C
Figure 8. DC Current Gain
4
f = 1 MHz
I
E
= 0 mA
T
A
= 25°C
100
75°C
IC, COLLECTOR CURRENT (mA)
10
1
0.1
0.01
25°C
T
A
= −25°C
Cob , CAPACITANCE (pF)
3
2
1
V
O
= 5 V
0
1
2
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
10
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
T
A
= −25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 11. Input Voltage versus Output
Current
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Test/Measurement
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