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2N6851EDPBF

Description
200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
CategoryDiscrete semiconductor    The transistor   
File Size325KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

2N6851EDPBF Overview

200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF

2N6851EDPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-MBCY-W3
Reach Compliance Codecompli
ConfigurationSINGLE
Minimum drain-source breakdown voltage200 V
Maximum drain-source on-resistance0.8 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-205AF
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
GuidelineCECC
surface mountNO
Terminal surfaceNOT SPECIFIED
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
Transistor component materialsSILICON
Base Number Matches1
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