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2N5138

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size76KB,1 Pages
ManufacturerMicro Electronics
Websitehttp://www.microelectr.com.hk
Download Datasheet Parametric Compare View All

2N5138 Overview

Transistor,

2N5138 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.1 A
ConfigurationSingle
Maximum operating temperature125 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)0.2 W
surface mountNO
Nominal transition frequency (fT)30 MHz
Base Number Matches1

2N5138 Related Products

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Description Transistor, RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, Silicon, PNP, TO-106, TO-106, 4 PIN RF Small Signal Bipolar Transistor, 0.015A I(C), 1-Element, Silicon, NPN, TO-72, TO-72G, 3 PIN Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92E, 3 PIN Transistor, Transistor, Transistor, Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon
Reach Compliance Code unknow unknow unknown unknown unknown unknown unknown unknown
Configuration Single SINGLE SINGLE SINGLE Single Single Single SINGLE
Maximum operating temperature 125 °C 125 °C 200 °C 150 °C 125 °C 125 °C 125 °C 175 °C
Polarity/channel type PNP PNP NPN NPN NPN NPN NPN PNP
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W 0.35 W 0.2 W 0.2 W 0.2 W 0.36 W
surface mount NO NO NO NO NO NO NO NO
Nominal transition frequency (fT) 30 MHz 500 MHz 1000 MHz 260 MHz 300 MHz 800 MHz 400 MHz 400 MHz
Maximum collector current (IC) 0.1 A 0.08 A 0.015 A 0.03 A - - - 0.1 A
Minimum DC current gain (hFE) - 30 25 67 20 50 20 20
Maker - - Micro Electronics Micro Electronics Micro Electronics Micro Electronics Micro Electronics Micro Electronics

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