BSP50E6327XT datasheet, PDF - EEWORLD Datasheet

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BSP50E6327XT: DescriptionSmall Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size114KB，5 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BSP50E6327XT Overview

Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, SOT-223, 4 PIN

BSP50E6327XT Parametric

Parameter Name	Attribute value
Maker	SIEMENS
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	45 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PDSO-G4
Number of components	2
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	400 ns

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BSP50E6327XT Related Products

	BSP50E6327XT	BSP52E6327	BSP52E6327XT	BSP50E6327
Description	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 2-Element, NPN, Silicon, SOT-223, 4 PIN	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon	Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 2-Element, NPN, Silicon, SOT-223, 4 PIN	Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon
package instruction	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4	SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	45 V	80 V	80 V	45 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON
Minimum DC current gain (hFE)	2000	2000	2000	2000
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Number of components	2	1	2	1
Number of terminals	4	4	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN	NPN	NPN
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	1500 ns	1500 ns	1500 ns	1500 ns
Maximum opening time (tons)	400 ns	400 ns	400 ns	400 ns
Maker	SIEMENS	-	SIEMENS	SIEMENS

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