B350B, B360B
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Vishay General Semiconductor
Surface Mount Schottky Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Low forward voltage drop
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
DO-214AA (SMB)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A
T
J
max.
Diode variations
DO-214AA (SMB)
3.0 A
50 V, 60 V
60 A
0.51 V
150 °C
Single die
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case:
DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current at T
L
(fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
B350B
B35
50
3.0
60
-55 to +150
B360B
B36
60
V
A
A
°C
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward voltage
Maximum reverse current
TEST CONDITIONS
I
F
= 3.0 A
Rated V
R
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
SYMBOL
V
F (1)
I
R (2)
TYP.
0.58
0.51
-
3
MAX.
0.66
0.59
100
10
UNIT
V
μA
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
Revision: 17-Jan-14
Document Number: 89122
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
B350B, B360B
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(1)
B350B
70
15
B360B
UNIT
°C/W
Note
(1)
PCB. mounted with 0.4" x 0.4" (10 mm x 10 mm) copper pad areas, thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
ORDERING INFORMATION
(Example)
PREFERRED P/N
B360B-E3/52T
B360B-E3/5BT
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52T
5BT
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
3.0
Resistive or Inductive Load
2.5
2.0
1.5
1.0
0.5
0
0
25
50
75
100
125
150
T
M
Measured
at Mount of Terminal
100
Instantaneous Forward Current (A)
Average Forward Current (A)
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 25 °C
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
M
- Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
2.0
Average Power Loss (W)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.5
1.0
D = 0.1
D = 0.3
D = 0.2
D = 0.5
D = 0.8
Instantaneous Reverse Current (mA)
2.2
100
10
1
T
A
= 125 °C
0.1
0.01
0.001
0.0001
10
20
30
40
50
60
70
80
90
100
T
A
= 150 °C
D = 1.0
T
T
A
= 25 °C
D = t
p
/T
1.5
2.0
2.5
t
p
3.0
3.5
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Revision: 17-Jan-14
Document Number: 89122
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
B350B, B360B
www.vishay.com
Vishay General Semiconductor
1000
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
Revision: 17-Jan-14
Document Number: 89122
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000