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BC560J05Z

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size55KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

BC560J05Z Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 3 PIN

BC560J05Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)110
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
BC556/557/558/559/560
BC556/557/558/559/560
Switching and Amplifier
• High Voltage: BC556, V
CEO
= -65V
• Low Noise: BC559, BC560
• Complement to BC546 ... BC 550
1
TO-92
1. Collector 2. Base 3. Emitter
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
Parameter
Collector-Base Capacitance
: BC556
: BC557/560
: BC558/559
Collector-Emitter Voltage
: BC556
: BC557/560
: BC558/559
Emitter-Base Voltage
Collector Current (DC)
Collector Dissipation
Junction Temperature
Storage Temperature
Value
-80
-50
-30
-65
-45
-30
-5
-100
500
150
-65 ~ 150
Units
V
V
V
V
V
V
V
mA
mW
°C
°C
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
I
CBO
h
FE
V
CE
(sat)
V
BE
(sat)
V
BE
(on)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
: BC556/557/558
: BC559/560
: BC559
: BC560
Test Condition
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
=2mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
I
C
= -10mA, I
B
= -0.5mA
I
C
= -100mA, I
B
= -5mA
V
CE
= -5V, I
C
= -2mA
V
CE
= -5V, I
C
= -10mA
V
CE
= -5V, I
C
= -10mA, f=10MHz
V
CB
= -10V, I
E
=0, f=1MHz
V
CE
= -5V, I
C
= -200µA
f=1KHz, R
G
=2KΩ
V
CE
= -5V, I
C
= -200µA
R
G
=2KΩ, f=30~15000MHz
2
1
1.2
1.2
-600
Min.
110
-90
-250
-700
-900
-660
150
6
10
4
4
2
-750
-800
Typ.
Max.
-15
800
-300
-650
mV
mV
mV
mV
mV
mV
MHz
pF
dB
dB
dB
dB
Units
nA
h
FE
Classification
Classification
h
FE
A
110 ~ 220
B
200 ~ 450
C
420 ~ 800
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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