L7C170DC45 datasheet, PDF - EEWORLD Datasheet

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L7C170DC45: DescriptionStandard SRAM, 4KX4, 45ns, CMOS, CDIP22; Categorystorage storage; File Size841KB，7 Pages; ManufacturerLOGIC Devices; Websitehttp://www.logicdevices.com/

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L7C170DC45 Overview

Standard SRAM, 4KX4, 45ns, CMOS, CDIP22

L7C170DC45 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LOGIC Devices
package instruction	DIP, DIP22,.3
Reach Compliance Code	unknown
Maximum access time	45 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T22
JESD-609 code	e0
memory density	16384 bit
Memory IC Type	STANDARD SRAM
memory width	4
Humidity sensitivity level	3
Number of terminals	22
word count	4096 words
character code	4000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP22,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.00002 A
Minimum standby current	2 V
Maximum slew rate	0.045 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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L7C170DC45 Related Products

	L7C170DC45	L7C168CME45	L7C168CME85	L7C168CM85	L7C170DM45	L7C168DM45	L7C170CM85	L7C170CME85	L7C170DME85
Description	Standard SRAM, 4KX4, 45ns, CMOS, CDIP22	Standard SRAM, 4KX4, 45ns, CMOS, CDIP20	Standard SRAM, 4KX4, 85ns, CMOS, CDIP20	Standard SRAM, 4KX4, 85ns, CMOS, CDIP20	Standard SRAM, 4KX4, 45ns, CMOS, CDIP22	Standard SRAM, 4KX4, 45ns, CMOS, CDIP20	Standard SRAM, 4KX4, 85ns, CMOS, CDIP22	Standard SRAM, 4KX4, 85ns, CMOS, CDIP22	Standard SRAM, 4KX4, 85ns, CMOS, CDIP22
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices	LOGIC Devices
package instruction	DIP, DIP22,.3	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP20,.3	DIP, DIP22,.3	DIP, DIP20,.3	DIP, DIP22,.3	DIP, DIP22,.3	DIP, DIP22,.3
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	45 ns	45 ns	85 ns	85 ns	45 ns	45 ns	85 ns	85 ns	85 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T22	R-XDIP-T20	R-XDIP-T20	R-XDIP-T20	R-XDIP-T22	R-XDIP-T20	R-XDIP-T22	R-XDIP-T22	R-XDIP-T22
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit	16384 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4	4	4	4	4	4
Humidity sensitivity level	3	3	3	3	3	3	3	3	3
Number of terminals	22	20	20	20	22	20	22	22	22
word count	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words	4096 words
character code	4000	4000	4000	4000	4000	4000	4000	4000	4000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
organize	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4	4KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP22,.3	DIP20,.3	DIP20,.3	DIP20,.3	DIP22,.3	DIP20,.3	DIP22,.3	DIP22,.3	DIP22,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE	IN-LINE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Minimum standby current	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V	2 V
Maximum slew rate	0.045 mA	0.045 mA	0.025 mA	0.025 mA	0.045 mA	0.045 mA	0.025 mA	0.025 mA	0.025 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum standby current	0.00002 A	-	-	-	0.00002 A	-	0.00002 A	0.00002 A	0.00002 A

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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